X-Ray Standing Waves in the Study of Crystals and Surface Layers

Abstract

The physical nature, potentialities and prospects of application of the new method of studying the structure of crystals and thin surface layers (standing wave technique) is discussed. Applications of the external photo-effect excited by the X-ray standing wave to structure studies of crystal subsurface layers are discussed. In experiments conducted with an epitaxial Si film doped by B and Ge a change of phase of the scattering amplitude on the photoemission curve has been found. This change is caused by the total surface displacement due to a change in the interplanar spacing in the disturbed layer. The potentialities of the depth-selective analysis of X-ray standing waves are analyzed. Theoretical foundations of the secondary-radiation yield under conditions of multiple diffraction have been developed.