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Location of Impurity Atoms in the Volume and Surface Layers of Silicon Crystals, by X-Ray Standing Wave in the Laue Geometry

  • A. Yu. Kazimirov
  • M. V. Kovalchuk
  • V. G. Kohn

Abstract

The dynamical theory of X-ray diffraction predicts the formation of standing wave fields inside crystal. The nodal and antinodal planes of these standing waves are parallel to the diffracting planes and have the same period. The angular dependence of the fluorescent yield is defined by the position of the atom under study with respect to nodes and antinodes of the standing wave. Thus, by comparing the experimental curve of the fluorescent yield with the theoretical one, it is possible to obtain information about the position of impurity atoms in the crystal lattice.

Keywords

Standing Wave Angular Dependence Epitaxial Layer Impurity Atom Fluorescent Yield 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    J. A. Golovchenko, B. W. Batterman, and W. L. Brown, Observation of internal X-ray wave fields during Bragg diffraction with an application to impurity lattice location, Phys.Rev.Ser.B 10: 4239 (1974).ADSCrossRefGoogle Scholar
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    P. L. Cowan, J. A. Golovchenko, and M. F. Robbins, X-ray standing waves at crystal surfaces, Phys.Rev.Lett. 44: 1680 (1980).ADSCrossRefGoogle Scholar
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    M. V. Kovalchuk and V. A. Kohn, Uspechi fiz.nauk 29 (5): 426 (1986).Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. Yu. Kazimirov
    • 1
  • M. V. Kovalchuk
    • 1
  • V. G. Kohn
    • 2
  1. 1.Institute of CrystallographyAcademy of Sciences of the USSRMoscowUSSR
  2. 2.I. V. Kurchatov Institute of Atomic EnergyMoscowUSSR

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