Raman Scattering and Disordered Thin-Film Growth Phenomena

  • J. S. Lannin
Part of the NATO ASI Series book series (NSSB, volume 239)

Abstract

The use of Raman scattering as a probe of growth of thin films is reviewed. Enhancement of Raman signals to study early stages of growth and submonolayer films is described.

Keywords

Crystallization GaAs Convolution Auger Chemisorption 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S. Nakashima, K. Mizoguchi, Y. Inoue, M. Miyauchi, A. Mitsuishi, T. Nishimura and Y. Akasaka, Jpn. J. Appl. Phys. 25, L222 (1986).ADSCrossRefGoogle Scholar
  2. 2.
    R. Alben, D. Weaire, J. E. Smith, Jr., and M. H. Brodsky, Phys. Rev. B11, 2271 (1975).ADSGoogle Scholar
  3. 3.
    J. S. Lannin, Physics Today, 41, #7, 28 (1988).CrossRefGoogle Scholar
  4. 4.
    J. Fortner, R. Q. Yu and J. S. Lannin, Proc. 13th Intern. Conf. Amorphous and Liquid Semiconductors, ed. M. Paesler and R. Zallen, J. Non-Cryst. Solids (in press).Google Scholar
  5. 5.
    A. Campion, J. K. Brown and V. M. Grizzle, Surf. Sci. 115, L153 (1982).CrossRefGoogle Scholar
  6. 6.
    J. C. Tsang, in Light Scattering in Solids. V4, M. Cardona and G. Güntherodt ed. (Springer-Verlag), Berlin, 1989), p. 233 and references therein.CrossRefGoogle Scholar
  7. 7.
    M. Hunermann, W. Pletschen, V. Resch, V. Rettweiler, W. Richter, J. Geurts and P. Lautenschlager, Surf. Sci. 189/190, 322 (1987).ADSCrossRefGoogle Scholar
  8. 8.
    W. Hayes and R. Loudon, in Scattering of Light by Crystals (Wiley, New York, 1978).Google Scholar
  9. 9.
    J. S. Lannin, Proc. 12th Int. Conf. Amorphous and Liquid Semiconductors, J. Noncryst. Solids 97 and 98, 39 (1987).Google Scholar
  10. 10.
    G. A. N. Connell, R. J. Nemanich, and C. C. Tsai, Appl. Phys. Lett. 36, 31 (1980).ADSCrossRefGoogle Scholar
  11. 11.
    J. M. Worlock and S. P. S. Porto, Phys. Rev. Lett. 15, 697 (1965).ADSCrossRefGoogle Scholar
  12. 12.
    R. Shuker and R. W. Gammon, Phys. Rev. Lett. 25, 222 (1970).ADSCrossRefGoogle Scholar
  13. 13.
    N. Maley and J. S. Lannin, Proc. 18th Intern. Conf. Phvs. Semiconductors. Stockholm 1986, O. Engström ed. (World Scientific, Singapore, 1987), p. 1053.Google Scholar
  14. 14.
    F. Li and J. S. Lannin, Phys. Rev. B39, 6220 (1989).ADSGoogle Scholar
  15. 15.
    P. A. Temple and C. E. Hathaway, Phys. Rev. B7, 3685 (1973).ADSGoogle Scholar
  16. 16.
    B. Weinstein and M. Cardona, Phys. Rev. B7, 2545 (1973)ADSGoogle Scholar
  17. 17.
    J. S. Lannin and P.J. Carroll, Phil. Mag. 45, 155 (1982).CrossRefGoogle Scholar
  18. 18.
    R. J. Nemanich, S. A. Solin and R. M. Martin, Phys. Rev. B23, 635 (1981).Google Scholar
  19. 19.
    S. A. Solin and R. J. Kobliska, Proc. 5th Intern. Conf. Amorphous and Liquid Semicond., J. Stuke and W. Brenig eds. (Taylor and Francis, London, 1974), p. 1251.Google Scholar
  20. 20.
    G. Nelin and G. Nilsson, Phys. Rev. B5, 3151 (1972).ADSGoogle Scholar
  21. 21.
    R. J. MacFarlane, in Physics of Semimetals and Narrow Gap Semiconductors. D. L. Carter and R. T. Bate ed. (Pergamon, New York, 1971), p. 289.Google Scholar
  22. 22.
    J. Fortner, R. Q. Yu and J. S. Lannin (to be published).Google Scholar
  23. 23.
    L. Ley, R. A. Pollak, S. P. Kowalczyk, R. McFeely and D. A. Shirley, Phys. Rev. B8, 641 (1973).ADSGoogle Scholar
  24. 24.
    Z. Iqbal and S. Veprek, J. Phys. C15, 377 (1982).ADSGoogle Scholar
  25. 25.
    W. L. Brown, R. R. Freeman, K. Raghavachari and M. Schlüter, Science 233, 860 (1987).ADSCrossRefGoogle Scholar
  26. 26.
    S. Saito and S. Ohnishi, in Microclusters. S. Sugano, S. Ohnishi and Y. Nishina, (Springer-Verlag, Berlin, 1987) ed. p. 263.Google Scholar
  27. 27.
    D. Beeman, R. Tsu and M. F. Thorpe, Phys. Rev. B32, 874 (1985).ADSGoogle Scholar
  28. 28.
    N. Maley, D. Beeman and J. S. Lannin, Phys. Rev. B38, 10611 (1988).ADSGoogle Scholar
  29. 29.
    J. Fortner and J. S. Lannin, Phys. Rev. B37 (1988).Google Scholar
  30. 30.
    R. J. Nemanich and C. M. Doland, J. Vac. Sci. Tech. B3, 1142 (1985).Google Scholar
  31. 31.
    J. E. Yehoda and J. S. Lannin, J. Vac. Sci. Tech. A1, 392 (1983).ADSGoogle Scholar
  32. 32.
    N. Lustig, R. Fainchtein and J. S. Lannin, Phys. Rev. Lett. 55, 1775 (1985).ADSCrossRefGoogle Scholar
  33. 33.
    M. A. Renucci, J. B. Renucci and M. Cardona, Proc. 2nd Intern. Conf. Light Scattering in Solids. M. Balkanski ed. (Flammarion, Paris, 1971), p. 326.Google Scholar
  34. 34.
    J. S. Lannin, Phys. Rev. B16, 1510 (1977).ADSGoogle Scholar
  35. 35.
    J. S. Lannin, Proc. 5th Int. Conf. on Amorphous and Liquid Semiconductors. Garmisch-Partenkirchen, 1973 J. Stuke and W. Brenig, eds. (Taylor and Francis, London, 1974), p. 1245.Google Scholar
  36. 36.
    P. Persans, in Amorphous Silicon and Related Materials. H. Fritzsche, ed. (Word Scientific, Singapore, 1988), p. 1045.Google Scholar
  37. 37.
    F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg and B. A. Wilson, Appl. Phys. Lett. 45, 1138 (1984).ADSCrossRefGoogle Scholar
  38. 38.
    G. Abstreiter, Festkörperprobleme 26, 41 (1986).Google Scholar
  39. 39.
    R. J. Nemanich, M. J. Thompson, W. B. Jackson, C. C. Tsai and B. L. Stafford, J. Non-Cryst. Solids 50 and 60, 513 (1983).CrossRefGoogle Scholar
  40. 40.
    L. Koudelka, N. Lustig and J. S. Lannin, Solid State Commun. 63, 163 (1987).ADSCrossRefGoogle Scholar
  41. 41.
    W. Pletschen, N. Esser, J. Geurts, W. Richter, A. Tulke, M. Mattern-Klosson and H. Lüth, Proc. 18th Intern. Conf. Phys. Semicond.. O. Engström ed. (World Scientific, Singapore, 1987), p. 367.Google Scholar
  42. 42.
    H. Brugger, F. Schäffler and G. Abstreiter, Phys. Rev. Lett. 52, 141 (1984).ADSCrossRefGoogle Scholar
  43. 43.
    R. Feenstra, Bull. Amer. Phys. Soc. 34, 820 (1989).Google Scholar
  44. 44.
    H. Munekata and H. Kukimoto, Jpn. J. Appl. Phys. 12, 213 (1982); B. Abeles and T. Tiedje, Phys. Rev. Lett. 51, 2003 (1983).Google Scholar
  45. 45.
    H. Deckman, J. H. Dunsmuir and B. Abeles, Appl. Phys. Lett. 46, 592 (1985).CrossRefGoogle Scholar
  46. 46.
    N. Maley and J. S. Lannin, Phys. Rev. Rapid Commun. 31, 5577 (1985).ADSGoogle Scholar
  47. 47.
    J. S. Lannin, in Amorphous Hydrogenated Silicon. J. Pankove, ed.; Vol. 21B of Semiconductors and Semimetals. Beer and Willardson eds., p. 159 (1984); S. T. Kshirsagar and J. S. Lannin, J. de Phys. 42, 54 (1981).Google Scholar
  48. 48.
    R. Tsu, J. G. Hernandez and F. H. Pollak, J. Non-Cryst. Solids 66, 109 (1984).ADSCrossRefGoogle Scholar
  49. 49.
    D. Beeman, R. Tsu and M. F. Thorpe, Phys. Rev. B32, 874 (1985).ADSGoogle Scholar
  50. 50.
    N. Maley, D. Beeman and J. S. Lannin, Phys. Rev. B38, 10611 (1988).ADSGoogle Scholar
  51. 51.
    N. Maley, J. S. Lannin and H. Ugar, J. Non-Cryst. Solids 77 & 78, 1073 (1985).ADSCrossRefGoogle Scholar
  52. 52.
    C. Roxlo, B. Abeles and P. D. Persans, J. Vac. Sci. Techn. B4, 1430 (1986).Google Scholar
  53. 53.
    H. J. Trodahl, M. W. Wright and A. Bittar, Solid State Commun. 59, 699 (1986).ADSCrossRefGoogle Scholar
  54. 54.
    G. V. M. Williams, A. Bittar and H. J. Trodahl, J. Appl. Phys. 60, 5148 (1988).ADSCrossRefGoogle Scholar
  55. 55.
    R. Q. Yu, J. Fortner, and J. S. Lannin, (to be published).Google Scholar
  56. 56.
    R. C. Baetzold and J. F. Hamilton, Prog. Solid State Chem. 15, 1 (1983) and references therein.CrossRefGoogle Scholar
  57. 57.
    R. Biswas (private communication).Google Scholar
  58. 58.
    N. Maley and J. S. Lannin, Phys. Rev. B36, 1146 (1987).ADSGoogle Scholar
  59. 59.
    R. W. Collins, in Amorphous Silicon and Related Materials. H. Fritzsche ed. (World Scientific, Singapore, 1988), p. 1003.Google Scholar
  60. 60.
    R. Q. Yu, J. Fortner and J. S. Lannin, J. Vac. Sci. Techn. (in press).Google Scholar
  61. 61.
    C. M. Garner, I. Lindau, C. Y. Su, P. Pianetta and W. Spicer, Phys. Rev. B19, 3944 (1979).ADSGoogle Scholar

Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • J. S. Lannin
    • 1
  1. 1.Department of PhysicsPennsylvania State UniversityUniversity ParkUSA

Personalised recommendations