Strain Relaxation in Ge/Si(001) Studied Using X-Ray Diffraction

  • J. E. Macdonald
  • A. A. Williams
  • R. van Silfhout
  • J. F. van der Veen
  • M. S. Finney
  • A. D. Johnson
  • C. Norris
Part of the NATO ASI Series book series (NSSB, volume 239)


Grazing incidence x-ray diffraction has been utilized to give a direct measure of the lateral strain distribution during in-situ MBE deposition of Ge onto Si(001). Differences in growth conditions and thermal treatment result in significantly different strain relaxation behavior. The results demonstrate the gradual relaxation of strain, which is incomplete at a coverage of 11 monolayers. At this coverage the strain distribution exhibits two components, one of which is almost fully relaxed and the other having a range of lattice spacings intermediate between those for bulk Si and Ge. The results are discussed in terms of current models for strain relaxation.


Strain Distribution Bragg Peak Critical Thickness Strain Relaxation Strain Relief 
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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • J. E. Macdonald
    • 1
  • A. A. Williams
    • 1
  • R. van Silfhout
    • 2
  • J. F. van der Veen
    • 2
  • M. S. Finney
    • 3
  • A. D. Johnson
    • 3
  • C. Norris
    • 3
  1. 1.Physics DepartmentUniversity of Wales College of CardiffCardiffUK
  2. 2.FOM Institute for Atomic and Molecular PhysicsAmsterdamThe Netherlands
  3. 3.Physics DepartmentUniversity of LeicesterLeicesterUK

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