Scanning Tunneling Microscopy Study of Ge Molecular Beam Epitaxy on Si(111) 7×7
Scanning tunneling microscopy is used to study the nucleation and epitaxial growth of germanium on Si(111) substrates at elevated temperature. Different growth regimes of germanium are observed for coverages from the submonolayer range to about 10 ML. For small coverages germanium grows pseudomorphic. Triangular shaped islands and large reconstructed areas of (5×5) or (7×7) are observed. For coverages of about 5 ML the misfit of germanium to silicon leads to strain, which results in a quite disordered layer. For coverages of more than 10 ML the layer relaxes and assimilates the germanium bulk behavior. Here dislocations have been observed.
KeywordsScan Tunneling Microscopy Step Height Nucleation Center Growth Regime LEED Pattern
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