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Silicon Molecular Beam Epitaxy

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Kinetics of Ordering and Growth at Surfaces

Part of the book series: NATO ASI Series ((NSSB,volume 239))

Abstract

Aspects of the molecular beam epitaxy of Si and Ge on Si(001) are described. For Si-on-Si, step formation and growth mechanisms on vicinal surfaces are considered, using RHEED and STM. Ge-on-Si heteroepitaxy is discussed, including growth mode and lattice relaxation. Strained-layer superlattices have been fabricated by phase-locked epitaxy; analysis suggests that Ge4/Si12 has a direct band gap.

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Author information

Authors and Affiliations

  1. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305, Japan

    T. Sakamoto, K. Sakamoto, K. Miki, H. Okumura, S. Yoshida & H. Tokumoto

Authors
  1. T. Sakamoto
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  2. K. Sakamoto
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  3. K. Miki
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  4. H. Okumura
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  5. S. Yoshida
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  6. H. Tokumoto
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Editor information

Editors and Affiliations

  1. University of Wisconsin-Madison, Madison, Wisconsin, USA

    Max G. Lagally

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© 1990 Plenum Press, New York

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Sakamoto, T., Sakamoto, K., Miki, K., Okumura, H., Yoshida, S., Tokumoto, H. (1990). Silicon Molecular Beam Epitaxy. In: Lagally, M.G. (eds) Kinetics of Ordering and Growth at Surfaces. NATO ASI Series, vol 239. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0653-5_16

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  • DOI: https://doi.org/10.1007/978-1-4613-0653-5_16

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7911-2

  • Online ISBN: 978-1-4613-0653-5

  • eBook Packages: Springer Book Archive

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