Direct Epitaxial Growth of Quantum Structures with two and Three-Dimensional Carrier Confinement

  • P. M. Petroff
Part of the NATO ASI Series book series (NSSB, volume 239)

Abstract

We present the principles of “directed epitaxy” methods which are used for the growth of novel superlattice types in the GaAs-AlGaAs system. The “tilted superlattices” (TSL) are produced by using the periodic step array of a vicinal surface as a template. The role of phase stability, growth kinetics, step orientation and periodicity on the TSL perfection are discussed. The “columnar superlattice” (CSL) also uses a periodic step faceting as a growth template; their growth requires additionally a self organization of the epitaxy. The CSL could be used for the direct growth of quantum box superlattices. The TSL have been used to produce quantum wire superlattices. Their unique optical properties are a direct consequence of two dimensional carrier confinement.

Keywords

Migration Anisotropy Enthalpy Arsenic GaAs 

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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • P. M. Petroff
    • 1
  1. 1.Materials Department and Electrical and Computer Engineering DepartmentUniversity of CaliforniaSanta BarbaraUSA

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