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Development of Structural and Electronic Properties in the Growth of Metals on Semiconductors

  • G. Le Lay
  • M. Abraham
  • K. Hricovini
  • J. E. Bonnet
Part of the NATO ASI Series book series (NSSB, volume 239)

Abstract

We review recent work on the determination of the geometrical structures of several two-dimensional phases appearing in the early stages of the formation at and beyond room-temperature, of prototypical metal-semiconductor interfaces, namely Ag/Si(111), Pb/Ge(111) and Pb/Si(111). In parallel we present new data obtained by synchrotron radiation photoemission experiments on the same systems. Comparison of the structural results with the development of the electronic properties sheds light on numerous crucial points like the nature of the reversible 2D phase transitions that occur at 250–300°C for Pb on Ge(111) and Si(111).

Keywords

Scanning Tunneling Microscopy Scanning Tunneling Microscopy Image Incommensurate Phase Valence Band Spectrum AgR3 Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • G. Le Lay
    • 1
    • 2
  • M. Abraham
    • 1
    • 2
  • K. Hricovini
    • 3
  • J. E. Bonnet
    • 3
  1. 1.CRMC2-CNRSMarseille Cedex 9France
  2. 2.UFR Sciences de la MatièreUniversité de ProvenceMarseilleFrance
  3. 3.L.U.R.E.Orsay CedexFrance

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