Abstract
Since the introduction of integrated circuits in the late 1950’s, the number of individual transistors that can be placed upon a single circuit has approximately doubled every three years. Today, even university design laboratories for teaching of students can access chip foundries which produce 1.2 μm (and smaller) design rule circuits. Compared with this, many commercial companies are experimenting with the production of chips with critical dimensions of 0.1 μm, and university laboratories have produced individual devices with gate lengths much smaller than this [1,2]. The creation of devices whose spatially important scales may be only a few tens of nanometers opens the door to the study of many new and important physical effects, some of which have been described earlier [3]. Indeed, it can rightfully be said that it will be impossible to understand fully the operation of these devices without a full understanding of these newly appearing physical effects.
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Ferry, D.K., Grondin, R.O., Akers, L.A., Shiue, L.C. (1990). Architectures and Devices for ULSI. In: Tewksbury, S.K. (eds) Frontiers of Computing Systems Research. Frontiers of Computing Systems Research, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0633-7_3
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