Spin-Splitted Phase Transition in the Quantized Hall Effect in Narrow-Gap Hg(1-x)CdxTe Inversion Layers
The scattering of electrons by impurities in spin-splitted states on the inversion layer of narrow-gap semiconductors is studied in the presence of a quantizing magnetic field. The electron-electron exchange interaction is also included. Depending on the system, it is shown that the calculated longitudinal magneto-conductivity, as a function of the magnetic field B, presents discontinuities when the ratio of the average exchange potential to the average electron-impurity potential increases.
KeywordsLandau Level Inversion Layer Quantum Hall Effect Internal Electric Field Hall Resistivity
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