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Spin-Splitted Phase Transition in the Quantized Hall Effect in Narrow-Gap Hg(1-x)CdxTe Inversion Layers

  • Marta Silva dos Santos
  • Gilmar Eugenio Marques

Abstract

The scattering of electrons by impurities in spin-splitted states on the inversion layer of narrow-gap semiconductors is studied in the presence of a quantizing magnetic field. The electron-electron exchange interaction is also included. Depending on the system, it is shown that the calculated longitudinal magneto-conductivity, as a function of the magnetic field B, presents discontinuities when the ratio of the average exchange potential to the average electron-impurity potential increases.

Keywords

Landau Level Inversion Layer Quantum Hall Effect Internal Electric Field Hall Resistivity 
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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • Marta Silva dos Santos
    • 1
  • Gilmar Eugenio Marques
    • 2
  1. 1.Departamento de FísicaUniversidade do AmazonasManausBrazil
  2. 2.Departamento de FísicaUniversidade Federal de Sãoo CarlosSão CarlosBrazil

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