Skip to main content
SpringerLink
Log in

Rapid Thermal Process Integration

  • Chapter
Book cover Reduced Thermal Processing for ULSI

Part of the book series: NATO ASI Series ((NSSB,volume 207))

Abstract

The capability of rapid thermal processing (RTP) to perform many of the thermal steps required for semiconductor device fabrication has been investigated and demonstrated thoroughly over the past few years and many excellent reviews of these techniques are now available1,2. Hundreds of papers have been published dealing with isolated RTP process techniques such as oxidation/nitridation3,4, junction annealing5–7, thermal silicidation8,9, densification and reflow of deposited oxides10,11, and contact sintering12. These techniques are now being implemented in prototyping and manufacturing lines, often replacing several different conventional furnace processing steps. Therefore integration of RTP into a full device process must be studied. The effects of RTP fall into two general categories: for the circuit designer, optimized circuit performance and reliability are required; for the process designer, the need is for a simple, robust, manufacturable process in which interactions between different steps do not adversely affect the properties of existing materials and structures. These interactions are particularly significant for thermal steps, since the thermal budget of a complete device process is cumulative.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. T.O. Sedgwick, Mat. Res. Soc. Symp. Proc. 92, 3 (1987).

    Google Scholar 

  2. R.T. Fulks, Mat. Res. Soc. Symp. Proc. 92 p. 249 (1987).

    Google Scholar 

  3. J. Nulman, J.P. Krusius, and A. Gat, IEEE Electron Dev. Lett. EDL-6, 205 (1985).

    Google Scholar 

  4. M.M. Moslehi, Mat. Res. Soc. Symp. Proc. 92 73 (1987).

    Google Scholar 

  5. T.E. Seidel. G.S. Pai, D.J. Lischner, D.M. Maher, R.V. Knoell, J.S. Williams, B.R. Penumalli, and D.C. Jacobson, Mat. Res. Soc. Symp. Proc. 35, 329 (1985).

    Google Scholar 

  6. I.D. Calder, H.M. Naguib, D. Houghton, and F.R. Shepherd, Mat. Res. Soc. Symp. Proc. 35, p. 353 (1985).

    Google Scholar 

  7. A.A. Naem and I.D. Calder, J. Appl. Phys. 62, 596 (1987).

    Google Scholar 

  8. S.P. Murarka, “Silicides for VLSI Application” (Academic Press, New York 1983).

    Google Scholar 

  9. Y.H. Ku, S.K. Lee, E. Louis, D.K. Shih, and D.L. Kwong, Mat. Res. Soc. Symp. Proc. 92, 155 (1987).

    Google Scholar 

  10. J.S. Mercier, Solid State Technol. 30-7, 85 (1987

    MathSciNet  Google Scholar 

  11. J.S. Mercier, L.D. Madsen, and I.D. Calder, Mat. Res. Soc. Symp. Proc. 52, 251 (1986).

    Google Scholar 

  12. L.D. Madsen and J.S. Mercier, to be published in Proc. Fourth Can. Semi. Technol. Conf. (1988).

    Google Scholar 

  13. M.L. Reed, B. Fishbein, and J.D. Plummer, Appl. Phys. Lett. 47, 40 (1985).

    Google Scholar 

  14. D.B. Scott, K.-L. Chen, and R.D. Davies, chapter 10 in “VLSI Handbook”, ed. by N.G. Einspruch, (Academic Press, Orlando, 1985).

    Google Scholar 

  15. L.C. Parlilo, chapter 11 in “VLSI Technology”, ed. by S.M. Sze, (McGraw-Hill, New York, 1983).

    Google Scholar 

  16. I. Brodie and J.J. Muray, “The Physics of Microfabrication”, (Plenum, New York, 1982).

    Google Scholar 

  17. R.A. Chapman, R.A. Haken, D.A. Bell, C.C. Wei, R.H. Havemann, T.E Tang, T.C. Holloway, and R.J. Gale, IEDM Tech. Digest 87, 362 (1987).

    Google Scholar 

  18. J.F. Gibbons, S. Reynolds, C. Gronet, D. Vook, C. King, W. Opyd, S. Wilson, C. Nauka, G. Reid, and R. Hull, Mat. Res. Soc. Symp. Proc. 92, 281 (1987).

    Google Scholar 

  19. M.M. Moslehi, K.C. Saraswat, and S.C. Shatas, Mat. Res. Soc. Symp. Proc 92, p. 295 (1987).

    Google Scholar 

  20. G.E.P. Box and N.R. Draper, “Empirical Model-Building and Response Surfaces”, (John Wiley, New York, 1987).

    Google Scholar 

  21. A. Kamgar, W. Fichtner, T.T. Sheng, and D.C. Jacobson, Appl. Phys. Lett. 45, 754 (1984).

    ADS  Google Scholar 

  22. A.L. Butler, D.J. Foster, and A.J. Pickering, Mat. Res. Soc. Symp. Proc. 71, 417 (1986).

    Google Scholar 

  23. S.K. Lee, D.K. Shih, Y.H. Ku, E. Louis, and D.L. Kwong, Proc. SPIE 797, 20 (1987).

    Google Scholar 

  24. D.L. Kwong, N.S. Alvi, Y.H. Ku, and A.W. Cheung, Mat. Res. Soc. Symp. Proc. 52, 241 (1986).

    Google Scholar 

  25. J.B. Lasky, J. Appl. Phys. 54, 6009 (1983).

    ADS  Google Scholar 

  26. I.-W. Wu, R.T. Fulks, and J.C. Mikkelsen, Jr., J. Appl. Phys. 60, 2422 (1986).

    ADS  Google Scholar 

  27. M.E. Lunnon, J.T. Chen, and J.E. Baker, J. Electrochem. Soc. 132, 2473 (1985)

    Google Scholar 

  28. M.E. Lunnon, J.T. Chen, and J.E. Baker Appl. Phys. Lett. 45, 1059 (1984)

    ADS  Google Scholar 

  29. M.E. Lunnon, J.T. Chen, and J.E. Baker Appl. Phys. Lett. 46, 35 (1985)

    ADS  Google Scholar 

  30. H. Mikoshiba, H. Abiko, and M. Kanamori, Jpn. J. Appl. Phys. 25, L631 (1986).

    ADS  Google Scholar 

  31. S. Solmi, E. Landi, and P. Negrini, IEEE Electron Dev. Lett. EDL-5, 359 (1984).

    Google Scholar 

  32. E.K. Broadbent, M. Delfino, A.E. Morgan, D.K. Sadana, and P. Maillot, IEEE Electron Dev. Lett. EDL-8, 318 (1987).

    Google Scholar 

  33. M.A. Finn and M.E. Coe, Electrochem. Soc. Ext. Abstr. 85-2, 374 (1985).

    Google Scholar 

  34. S.B. Felch, D.T. Hodul, and M. Salimian, Mat. Res. Soc. Symp. Proc. 92, 235 (1987).

    Google Scholar 

  35. N.E. McGruer and R.A. Oikari, IEEE Trans. Electron Dev. ED-33, 929 (1986).

    Google Scholar 

  36. J. Nulman, private communication.

    Google Scholar 

  37. S.K. Lee, D.L. Kwong, and N.S. Alvi, J. Appl. Phys. 60 3360 (1986),

    ADS  Google Scholar 

  38. R.G. Cosway and M.W. Hodel, J. Electrochem. Soc. 135, 533 (1988).

    Google Scholar 

  39. S.K. Lee, D.K. Shih, D.L. Kwong, N.S. Alvi, N.R. Wu, and H.S. Lee, Mat. Res. Soc. Symp. Proc. 71, 449 (1986).

    Google Scholar 

  40. S.K. Lee, D.K. Shih, Y.H. Ku, E. Louis, and D.L. Kwong, Proc. SPIE 797, 20 (1987).

    Google Scholar 

  41. Z.A. Weinberg, D.R. Young, J.A. Calise, S.A. Cohen, J.C. DeLuca, and V.R. Deline, Appl, Phys. Lett. 45, 1204 (1984).

    ADS  Google Scholar 

  42. S. Onishi, K. Nishizawa, and K. Sakiyama, Proc. Spring Mtg. Jpn. Appl. Phys. Soc., p 484 (1987).

    Google Scholar 

  43. T. Hara, H. Suzuki, and M. Furukawa, Jpn. J. Appl. Phys. 23, L452 (1984).

    ADS  Google Scholar 

  44. J.S. Mercier, I.D. Calder, R.P. Beerkens, and H.M. Naguib, J. Electrochera Soc. 132 2432 (1985).

    Google Scholar 

  45. N.S. Alvi and D.L. Kwong, J. Electrochem. Soc. 133, 2626 (1986).

    Google Scholar 

  46. N. Shah, J. McVittie, N. Sharif, J. Nulman, and A. Gat, Mat. Res. Soc. Symp. Proc. 52, 233 (1986).

    Google Scholar 

  47. I. Barsony. H. Anzai, and J.-I. Nishizawa, J. Electrochem. Soc. 133, 157 (1986).

    Google Scholar 

  48. J.R. Gigante, J.M. Geneczko, and R.N. Ghoshtagore, Electrochem. Soc. Ext. Abstr. 85-2, 382 (1985).

    Google Scholar 

  49. R.A. Levy and K. Nassau, J. Electrochem. Soc. 133, 1417 (1986).

    Google Scholar 

  50. T. Abraham and I. Wylie, to be published (1988).

    Google Scholar 

  51. H. Kotani, T. Tsutsumi, J. Komori, and S. Nagao, IEDM Tech. Dig. 87, p. 217 (1987).

    Google Scholar 

  52. G. Jolly, unpublished.

    Google Scholar 

  53. S.J. Pennycook and R.J. Culbertson, Proc. SPIE 797, (1987

    Google Scholar 

  54. S.J. Pennycook and R.J. Culbertson, Mat. Res. Soc. Symp. Proc. 74, 379 (1987)

    Google Scholar 

  55. . R.B. Fair, J. Vac. Sci. Technol. A4, 926 (1986).

    ADS  Google Scholar 

  56. F.F. Morehead and R.F. Lever, Appl. Phys. Lett. 48, 151 (1986)

    ADS  Google Scholar 

  57. F.F. Morehead and R.F. Lever, Mat. Res. Soc. Symp. Proc. 52, 49 (1986).

    Google Scholar 

  58. A.E. Michel, Mat. Res. Soc. Symp. Proc. 52, 3 (1986).

    Google Scholar 

  59. L.C. Hopkins, T.E. Seidel, J.S. Williams, and J.C. Bean, J. Electrochem. Soc. 132, 2035 (1985).

    Google Scholar 

  60. K. Cho, M. Numan, T.G. -Finstead, W.K. Chu, J. Liu, and J.J. Wortman, Appl. Phys. Lett. 47, 1321 (1985).

    ADS  Google Scholar 

  61. S.R. Wilson, R.B. Gregory, W.M. Paulson, S.J. Krause, J.D. Gressett, A.H. Hamdi, F.D. McDaniel, and R.G. Downing, J. Electrochem. Soc. 132, 922 (1985).

    Google Scholar 

  62. S.R. Wilson, R.B. Gregory, W.M. Paulson, S.J. Krause, J.A. Leavitt, L.C. Mclntyre, Jr., J.L. Seerveld, and P. Stoss, Appl. Phys. Lett. 49, 660 (1986).

    ADS  Google Scholar 

  63. M. Current and A. Yee, Solid State Technol. 26-10, 197 (1983).

    Google Scholar 

  64. J. Blake, J.C. Gelpey, J.F. Moquin, J. Schlueter, and R. Capodilupo, Mat. Res. Soc. Symp. Proc. 92, 265 (1987).

    Google Scholar 

  65. A. Gat, private communication.

    Google Scholar 

  66. G. Bentini, L. Correra, and C. Donolato, J. Appl. Phys. 56, 2922 (1984).

    ADS  Google Scholar 

  67. K. Tsukamoto, T. Okamoto, M. Shimizu, T. Matsukawa, and H. Nakata, IEDM Tech. Dig. 84, p. 130 (1984).

    Google Scholar 

  68. D. Pramanik, M. Deal, A.N. Saxena, and O.K.T. Wu, Semi. Int. 8-5, 94 (1985).

    Google Scholar 

  69. C.Y. Ting and S.S. Iyer, Proc 1985 VLSI Multilevel Interconnet Conf., p. 307 (1985).

    Google Scholar 

  70. V.Q. Ho and D. Poulin, J. Vac. Sci. Technol. A5, 1396 (1987).

    ADS  Google Scholar 

  71. D.B. Scott, R.A. Chapman, C.-C. Wie, S.S. Mahant-Shetti, R.A. Haken and T.C. Holloway, IEEE Trans. Electron Dev. ED-34, 562 (1987).

    Google Scholar 

  72. K.L. Wang, T.C. Holloway, R.F. Pinizzotto, Z.P. Socczak, W.R. Hunter, and A.F. Tasch, Jr., IEEE Trans. Electron Dev. ED-29, 547 (1982).

    ADS  Google Scholar 

  73. R. Beyers, J. Appl. Phys. 56, 147 (1984).

    ADS  Google Scholar 

  74. L.J. Brillson, M.L. Slade, H.W. Richter, H. Vander Plas and R.T. Fulks, Appl. Phys. Lett. 47, 1080 (1985).

    ADS  Google Scholar 

  75. M. Natan, Mat. Res. Soc. Symp. Proc. 74, 679 (1987).

    Google Scholar 

  76. M. Delfino, A.E. Morgan, E.K. Broadbent, P. Maillot and D.K. Sadana, J. Appl. Phys. 62, 1882 (1987).

    ADS  Google Scholar 

  77. T.P. Chow, W. Katz and G. Smith, Appl. Phys. Lett. 46, 41 (1985).

    ADS  Google Scholar 

  78. H. Matsui, H. Ohtsuki, M. Ino and S. Ushio, Mat. Res. Soc. Symp. Proc. 54, 769 (1986).

    Google Scholar 

  79. T. Okamoto, K. Tsukamoto, M. Shimizu and T. Matsukawa, J. Appl. Phys. 61, 4530 (1987).

    ADS  Google Scholar 

  80. S.W. Sun, F. Pintchovski, P.J. Tobin and R.L. Hance, Mat. Res. Soc. Symp. Proc. 92, 165 (1987).

    Google Scholar 

  81. A. Naem, private communication.

    Google Scholar 

  82. A.A. Pasa, J.P. de Souza, I.J.R. Baumvol and F.L. Freire, Jr., J. Appl. Phys. 61, 1228 (1987).

    ADS  Google Scholar 

  83. S.W. Sun, F. Pintchovski, P.J. Tobin and R.L. Hance, Mat. Res. Soc. Symp. Proc. 92, 165 (1987).

    Google Scholar 

  84. M. Tabasky, E.S. Bulat, B.M. Ditchek, M.A. Sullivan and S. Shatas, Mat. Res. Soc. Symp. Proc. 52, 271 (1986)

    Google Scholar 

  85. M. Tabasky, E.S. Bulat, B.M. Ditchek, M.A. Sullivan and S. Shatas, IEEE Trans. Electron Dev. ED-34, 548 (1987).

    Google Scholar 

  86. L. Van den Hove, R. Wolters, K. Maex, R.F. De Keersmaecker and G.J. Declerck, IEEE Trans. Electron Dev. ED-34, 554 (1987).

    Google Scholar 

  87. A.E. Morgan, E.K. Broadbent, M. Delfino, B. Colman and D.K. Sadana, J. Electrochem. Soc. 134, 925 (1987).

    ADS  Google Scholar 

  88. R. Beyers, R. Sinclair and M.E. Thomas, J. Vac. Sci. Technol. B2, 781 (1984).

    Google Scholar 

  89. M. Delfino, E.K. Broadbent, A.E. Morgan, B.J. Burrow and M.H. Norcott, IEEE Electron Dev. Lett. EDL-6, 591 (1985).

    Google Scholar 

  90. P.J. Rosser and G.J. Tomkins, Mat. Res. Soc. Symp. Proc. 35, 457 (1985).

    Google Scholar 

  91. H. Kaneko, M. Koyanagi, S. Shimizu, Y. Kubota and S. Kishino, IEDM Tech. Dig. 85, p. 208 (1985).

    Google Scholar 

  92. A.E. Morgan, E.K. Broadbent and A.H. Reader, Mat. Res. Soc. Symp. Proc. 52, 279 (1986).

    Google Scholar 

  93. B. Cohen and J. Nulman, Mat. Res. Soc. Symp. Proc. 92, 171 (1987).

    Google Scholar 

  94. T. Okamoto, M. Shimizu, A. Ohsaki, Y. Mashiko, K. Tsuokamoto, T. Matsukawa and S. Nagao, J. Appl. Phys. 62 4465 (1987).

    ADS  Google Scholar 

  95. T. Tang, C.-C. Wei, R. Haken, T. Holloway, C.-F. Wan and M. Douglas, IEDM Tech. Dig. 85, p. 590 (1985).

    Google Scholar 

  96. M. Horiuchi and K. Yamaguchi, IEEE Trans. Electron Dev. ED-33, 260 (1986).

    Google Scholar 

  97. D.L. Kwong, Y.H. Ku, S.K. Lee, E. Louis, N.S. Alvi and P. Chu, J. Appl. Phys. 61, 5084 (1987)

    ADS  Google Scholar 

  98. Y.H. Ku, S.K. Lee, E. Louis, D.K. Shih and D.L. Kwong, Mat. Res. Soc. Symp. Proc. 92, 155 (1987

    Google Scholar 

  99. Y.H. Ku, S.K. Lee, D.K. Shih, D.L. Kwong, C.-O. Lee and J.R. Yeargain, Proc. SPIE 797, 61 (1987).

    Google Scholar 

  100. D.X. Cao, H.B. Harrison and G.K. Reeves, Mat. Res. Soc. Symp. Proc. 100, 737 (1987).

    Google Scholar 

  101. V. Probst, H. Schaber, P. Lippens, L. Van den Hove and R. De Keersmaecker, Appl. Phys. Lett. 52, 1803 (1988).

    ADS  Google Scholar 

  102. H. Gierisch, F. Neppl, E. Frenzel, P. Eichinger and K. Heibar, Mat. Res. Soc. Symp, Proc. 71, 183 (1986).

    Google Scholar 

  103. B.M. Ditchek, M. Tabasky and E.S. Bulat, Mat. Res. Soc. Symp. Proc. 92, 199 (1987).

    Google Scholar 

  104. P.J. Tsang, S. Ogura, W.W. Walker, J.F. Shepard and D.L. Critchlow, IEEE Trans. Electron Dev. ED-29, 590 (1982).

    ADS  Google Scholar 

  105. M. Horiuchi and K. Yamaguchi, Solid-State Electron. 28, 465 (1985).

    ADS  Google Scholar 

  106. H.-C.W. Huang, R. Cook, D.R. Campbell, P. Ronsheim, W. Rausch and B. Cunningham, J. Appl. Phys. 63, 1111 (1988).

    ADS  Google Scholar 

  107. I. Ohdomari, K. Konuma, M. Takano, T. Chikyow, H. Kawarda, J. Nakanishi and T. Ueno, Mat. Res. Soc. Symp. Proc. 54, 63 (1986).

    Google Scholar 

  108. N.S. Alvi, D.L. Kwong, C.G. Hopkins and S.G. Bauman, Appl. Phys. Lett. 48, 1433 (1986).

    ADS  Google Scholar 

  109. H. Ishiwara and S. Horita, Jpn. J. Appl. Phys. 24, 568 (1985).

    ADS  Google Scholar 

  110. T.E. Seidel, IEEE Electron Dev. Lett. ED-4, 353 (1983).

    Google Scholar 

  111. C. Carter, W. Maszara, D.K. Sadana, G.A. Rozgonyi, J. Liu and J. Wortman, Appl. Phys. Lett. 44, 459 (1984).

    ADS  Google Scholar 

  112. R.A. Powell, J. Appl. Phys. 56, 2837 (1984).

    ADS  Google Scholar 

  113. D.K. Sadana, E. Myers, J. Liu, T. Finstead and G.A. Rozgonyi, Mat. Res. Soc. Symp. Proc. 23, 303 (1983).

    Google Scholar 

  114. A.C. Ajmera and G.A. Rozgonyi, Appl. Phys. Lett. 49, 1269 (1986).

    ADS  Google Scholar 

  115. D.S. Wen, P.L. Smith, C.M. Osbum and G.A. Rozgonyi, Appl. Phys. Lett. 51, 1182 (1987).

    ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Advanced Prototyping Laboratory, Northern Telecom Electronics, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7

    Iain D. Calder

Authors
  1. Iain D. Calder
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Roland A. Levy

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Plenum Press, New York

About this chapter

Cite this chapter

Calder, I.D. (1989). Rapid Thermal Process Integration. In: Levy, R.A. (eds) Reduced Thermal Processing for ULSI. NATO ASI Series, vol 207. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0541-5_5

Download citation

  • DOI: https://doi.org/10.1007/978-1-4613-0541-5_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7857-3

  • Online ISBN: 978-1-4613-0541-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation