Microstructural Defects in Rapid Thermally Processed IC Materials

  • Alec H. Reader
Part of the NATO ASI Series book series (NSSB, volume 207)


The most important trend in the current development of integrated circuits is the reduction in device dimensions which has lead to a number of specific requirements. The first of these requirements is that the “active” insulators in MOS devices must be ultra thin, typically below 10 nm thick. Using conventional furnace oxidation it is difficult to produce such thin oxides because the oxidation times are too short to be reproducibly controlled. As short annealing times can be carefully controlled in a rapid thermal processing (RTP) system, it can be understood that such systems can be usefully employed to carry-out reproducible short-period oxidations at temperatures typically used for furnace oxidation. Another requirement is that, as lateral device dimensions are reduced, there must be a concomitant shrinkage of the source/drain junction depths in the devices — forming so-called shallow junctions. Also the dopant profiles in the junctions must be precisely controlled. This requires that excessive temperatures and annealing times are reduced, so that less dopant diffusion occurs. However, after implantation of the dopant, a high temperature annealing step is required for dopant activation and reconstruction of the substrate’s crystal-lattice.


Rapid Thermal Annealing Dislocation Loop Amorphous Layer Rapid Thermal Processing Dopant Diffusion 
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  1. 1.1
    T.O. Sedgwick, Proc.Symp. “Reduced Temperature Processing for VLSI”, Eds.G.R. Strinivasan and R. Reif 86–5, Electrochem.Soc., Princeton, NJ 1086, p.49.Google Scholar
  2. 1.2
    H.C. de Graaf and J.G. de Groot, IEEE Trans. Electron Dev. ED-26, 1771 (1979)CrossRefGoogle Scholar
  3. 1.3
    C.Y. Wong, A.E. Michel, R.D. Isaac, R.H. Kastl and S.R. Mader, J.Appl.Phys. 55, 1131 (1984).ADSCrossRefGoogle Scholar
  4. 1.4
    T. Hara, H. Suzuki and M. Furukawa, Jap. J.Appl.Phys. 23, L452 (1984).ADSCrossRefGoogle Scholar
  5. 1.5
    N.S. Alvi and D.L. Kwong, J.Electrochem.Soc. 133, 2626 (1986)CrossRefGoogle Scholar
  6. 1.6
    J.S. Mercier, L.D. Madsen and I.D. Calder, Mat. Res. Soc.Proc. 52, 251 (1986).CrossRefGoogle Scholar
  7. 1.7
    C.S. Pai, E. Cabreros, S.S. Lau, T.E. Seidel and I. Suni, Appl. Phys.Lett.46, 652 (1985).ADSCrossRefGoogle Scholar
  8. 1.8
    R.A.M. Wolters and A.J.M. Nellissen, Proc. 4th Int. IEEE VLSI Multilevel Interconnect Conf. 1987, p.351.Google Scholar
  9. 1.9
    N.S. Alvi, S.M. Tang, R. Kwor and M.R. Fulcher, J. Appl. Phys. 62, 4878 (1987).ADSCrossRefGoogle Scholar
  10. 2.1
    D.K. Sadana, MRS Proc. 92, 319 (1987).CrossRefGoogle Scholar
  11. 2.2
    S.M. Davidson and G.R. Booker, Rad. Ef., 6, 33 (1970).ADSCrossRefGoogle Scholar
  12. 2.3
    T.E. Seidel, D.J. Lischner, C.S. Pai, R.V. Knoell and D.H. Maher, Nucl Inst, and Meth. B7, 251 (1985).ADSGoogle Scholar

B+ — medium doses

  1. 2.4
    C.C. Ho, R. Kwor, C. Aranjo and Gelpy, MRS Proc. 52, 225 (1986).CrossRefGoogle Scholar
  2. 2.5
    J. Huang and R.J. Jaccodine, MRS Proc. 52, 57 (1986).CrossRefGoogle Scholar
  3. 2.6
    C.R. Peter, J.P. de Souza and C.M. Hasenack, J.Appl.Phys. 64, 2696 (1988).ADSCrossRefGoogle Scholar

B+ High doses

  1. 2.7
    W.K. Hofker, Philips Res. Reports Suppl. 8 (1975).Google Scholar
  2. 2.8
    H-Y Liu, P-H Chang, J. Liu and B-Y Mao, MRS Proc. 92, 15 (1987).CrossRefGoogle Scholar
  3. 2.9
    N.E.B. Cowern, K.J. Yallup, D.J. Godfrey, D.G. Hasko, R.A. Mc. Mahon, Ahmed, W.M. Stobbs and D.S. McPhail, MRS Proc. 52, 65 (1986).CrossRefGoogle Scholar
  4. 2.10
    D.G. Hasko, R.A. McMahon, H. Ahmed, W.M. Stobbs and D.J. Godfrey, Inst. Phys. Conf. Series 76, 99 (1985).Google Scholar

Heavy ions

  1. 2.11
    D.K. Sadana, M.C. Wilson, G.R. Booker and J. Washburn, J. Electrochem. Soc. 127, 1589 (1980).CrossRefGoogle Scholar

Heavy ions — medium doses

  1. 2.12
    D.K. Sadana, J. Washburn and G.R. Booker, Phil. Mag. B46, 611 (1982).Google Scholar
  2. 2.13
    J. Narayan, D. Fathy, O.S. Oen and O.W. Holland, J. Vac. Sci. Technol. A2, 1303 (1984)ADSGoogle Scholar

Heavy ions — high doses

  1. 2.14
    Ion Implantation in Semiconductors, J.W. Mayer, L. Eriksson and J.A. Davies (Academic Press, New York), 1970, Chapter 5.Google Scholar
  2. 2.15
    N.R. Wu, D.K. Sadana and J. Washburn, App. Phys. Lett. 44, 782 (1984).ADSCrossRefGoogle Scholar
  3. 2.16
    D.K. Sadana, W. Maszara, J. Wortman, G.A. Rozgony, and W.K. Chu, J. Electrochem. Soc. 131, 943 (1984).CrossRefGoogle Scholar
  4. 2.17
    D.M. Maher, R.V. Knoell, M.B. Ellington and D.C. Jacobson, Proc. MRS 52, 93 (1986).CrossRefGoogle Scholar
  5. 2.18
    W. Maszara, D.K. Sadana, G.A. Rozgonyi, T. Sands and J. Washburn, Proc. MRS. 35, 277 (1984).CrossRefGoogle Scholar
  6. 2.19
    D. Wouters, D. Avau, P. Mertens and H.E. Maas, MRS Proc. 52, 217 (1986).CrossRefGoogle Scholar
  7. 2.20
    C.C. Ho, R. Kwor, C. Araujo and J. Gelpy, Proc. MRS 52, 225 (1986).CrossRefGoogle Scholar
  8. 2.21
    D.L. Kwong, N.S. Alvi, Y.H. Ku and A.W. Cheung, MRS Proc. 52, 241 (1986).CrossRefGoogle Scholar
  9. 2.22
    Ion Implantation, T.E. Seidel in “VLSI Technology”, ed. Sze, McGraw-Hill, 1984.Google Scholar
  10. 2.23
    A.H. Reader, F.W. Schapink and S. Radelaar, Inst. Phys. Conf. Series 76, 151 (1985).Google Scholar

Si+, Ge+, Sn+ preamorphization

  1. 2.24
    M. Delfino, D.K. Sadana and A. Morgan, App. Phys. Lett. 49, 575 (1986)ADSCrossRefGoogle Scholar
  2. M. Delfino, A.E. Morgan and D.K. Sadana, Nucl. Inst. Meth. B19/20, 363 (1987).Google Scholar
  3. 2.25
    W. Maszara, D.K. Sadana, G.A. Rozgonyi, T. Sands and J. Washburn, Proc. MRS 35, 277 (1984).CrossRefGoogle Scholar
  4. 2.26
    W.W. Park, M.F. Becker and R.M. Walser, J. Mater. Res. 3, 298 (1988).ADSCrossRefGoogle Scholar
  5. 2.27
    D.K. Sadana, T. Sands, W. Maszara and G.A. Rozgonyi, Inst. Phys. Conf.Series 76, 93 (1985)Google Scholar
  6. 2.28
    C. Carter, W. Maszara, D.K. Sadana, G.A. Rozgonyi, J. Liu and J. Wortman, Appl. Phys. Lett. 44, 459 (1983)ADSCrossRefGoogle Scholar
  7. 2.29
    T. Sands, J. Washburn, E. Myers and D.K. Sadana, Nucl. Inst. & Meth. B7/8, 337 (1985).ADSCrossRefGoogle Scholar

Working 1 um CMOS circuit incorporating Ge+ preamorphization

  1. 2.30
    D. Sharma, S. Goodwin-Johansson, D-S. Wen, C.K. Kim and C.M. Osburn, Electrochem. Soc. (Philadelphia, Pennsylvania) Meeting May 1987.Google Scholar
  2. 2.31
    D.S. Wen, C.M. Osburn, G.A. Rozgonyi, and P. Smith, Electrochem. Soc. (Philadelphia, Pennsylvania) Meeting May 1987.Google Scholar
  3. 3.1
    C.Y. Wong, A.E. Michel, R.D. Isaac, R.H. Kastl and S.R. Mader, J.Appl.Phys.55, 1131 (1984).ADSCrossRefGoogle Scholar
  4. 3.2
    W.L.M.J. Josquin, P.R. Boudewijn and Y. Tamminga, Appl. Phys. Letts. 43, 960 (1983).ADSCrossRefGoogle Scholar
  5. 3.3
    G.L. Patton, J.C Bravman and J.D. Plummer, IEEE trans. ED-33, 1754 (1986).CrossRefGoogle Scholar
  6. 3.4
    J.M.C. Stork, M. Arienzo and C.Y. Wong, IEEE Trans. ED-32, 1766 (1985).CrossRefGoogle Scholar
  7. 3.5
    A.H. Reader, F.W. Schapink and S. Radelaar, in “Poly-microcrystalline and amorphous Semiconductors”., MRS-Europe Conf.Proc.1984, eds. P. Pinard and S. Kalbitzer, published by Les Edition de Physique, Les Ulis, France, p.253.Google Scholar
  8. 3.6
    S.R. Wilson, R.B. Gregory, W.M. Paulson, S.J. Krause, J.D. Gressett, A.H. Hamdi, F.D. Mc Daniel and R.G. Downing, J. Electrochem. Soc. 132, 922 (1985).CrossRefGoogle Scholar
  9. 3.7
    H.J. Bohm, H. Wendt, H. Oppolzer, K. Masseli and R. Kassing, J. Appl. Phys. 62, 2784 (1987).ADSCrossRefGoogle Scholar
  10. 3.8
    H.J. Bohm, H. Kabza, T.F. Meister and H. Wehdt, Int Electron Devices meeting 1987, published by IEEE, p. 269.Google Scholar
  11. 3.9a
    J.L. Hoyt, E.F. Crabbé, J.F. Gibbonsn and R.F.W. Pease, Appl. Phys.Lett., 50, 751 (1987).ADSCrossRefGoogle Scholar
  12. 3.9b
    J.L. Hoyt, E.F. Crabbé, J.F. Gibbonsn and R.F.W. Pease, MRS Proc. 92, 47 (1987).Google Scholar
  13. 3.10
    M. Delfino, J.G. de Groot, K.N. Ritz, P. Maillot and A.E. Morgan, submitted to J. Electrochem. Soc. (Note: capping oxide important to prevent As loss).Google Scholar
  14. 3.11
    R.H. Reuss and T.P. Bushey, MRS Proc. 92, 221 (1987)CrossRefGoogle Scholar
  15. 3.12
    A. Kermani, F. Van Giesen, S. Litwin, R. Sullivan, T.J. DeBolske and J.L. Crowley, MRS Proc. 92, 227 (1987).CrossRefGoogle Scholar
  16. 3.13
    J.L. Hoyt, E.F. Crabbé, R.F.W. Pease, J.F. Gibbons and A.F. Marshall, J. Electrochem. Soc. 135, 1773 (1988).CrossRefGoogle Scholar
  17. 3.14
    V. Probst, H.J. Bohm, H. Schaber, H. Oppolzer and I. Weitzel, J. Electrochem. 135, 671 (1988).CrossRefGoogle Scholar
  18. 4.1
    J.C. Gelpey, P.O. Stump and R.A. Capodilupo, MRS Proc. 52, 321 (1986).CrossRefGoogle Scholar
  19. 4.2
    J. Nulman, J.P. Krusius and P. Rentteln, MRS Proc. 52, 341 (1986).CrossRefGoogle Scholar
  20. 4.3
    Z.A. Weinberg, J.N. Nguyen, S.A. Cohen and R. Kalish, MRS Proc.52, 327 (1986).CrossRefGoogle Scholar
  21. 4.4
    Z.A. Weinberg, D.R. Young, J.A. Calise, S.A. Cohen, J.C. Deluca, V.R. Deline, Appl. Phys. Lett., 45 (11), 1204 (1984).ADSCrossRefGoogle Scholar
  22. 4.5
    N.Chan. Tung, Y. Caratini and J.L. Buevoz, Mat. Res. Soc. Proc. 92, 147 (1987).CrossRefGoogle Scholar
  23. 4.6
    M.M. Moslehi, MRS Proc. 92, 73 (1987).CrossRefGoogle Scholar
  24. 4.7
    L. Dori, M. Arienzo, Y.C. Sun, T.N. Nguyen, J. Wetzel, Mat.Res.Soc.Proc. 76, 259 (1987).CrossRefGoogle Scholar
  25. 4.8
    J. Nulman, J.P. Krusuis, N. Shah, A. Gat, A. Balduin, J. Vac.Sci. Technol. A 4, 1005–1008 (1986).ADSCrossRefGoogle Scholar
  26. 4.9
    P. Balk, M. Aslam, D.R. Young, Solid State Electronics 27, 709–719 (1984).ADSCrossRefGoogle Scholar
  27. 4.10
    M.M. Moslehi, K.C. Saraswat, S.C. Shattss, Appk. Phys. Lett. 47 (10), 1113–1115 (1985).ADSCrossRefGoogle Scholar
  28. 4.11
    J.T. Fitch, G. Lucowsky, MRS Proc. 92, 89 (1987).CrossRefGoogle Scholar
  29. 4.12
    A.J. Walker and A.H. Reader, unpublished.Google Scholar
  30. 4.13
    C.H. Seager and W.K. Schubert, J. Appl. Phys. 63, 2869 (1988).ADSCrossRefGoogle Scholar
  31. 5.1
    A.E. Morgan, E.K. Broadbent and A.H. Reader, MRS. Proc.52, 279 (1986).CrossRefGoogle Scholar
  32. 5.2
    R. Beyers and R. Sinclair, J. Vac. Sci. Technol.B2, 781 (1984).Google Scholar
  33. 5.3
    A.E. Morgan, E.K. Broadbent, K.N. Ritz, D.K. Sadana and B.J. Burrow, submitted to J. Appl. phys.Google Scholar
  34. 5.4a
    A.E. Morgan, E.K. Broadbent and D.K. Sadana, Appl. Phys. Lett.49, 1236 (1986).ADSCrossRefGoogle Scholar
  35. 5.4b
    J.C. Barbour, A.E.T. Kuiper, M.f.C. Willemsen and A.H. Reader, Appl. Phys. Lett. 50, 953 (1987).ADSCrossRefGoogle Scholar
  36. 5.5
    M.F.C. Willemsen, A.E.T. Kuiper, A.H. Reader, R. Hokke and J.C. Barbour, J. Vac.Sci. Technol. B6, 53(1988).Google Scholar
  37. 5.6
    M. Delfino, E.K. Broadbent, A.E. Morgan, B.J. Burrow and M.H. Norcott, IEEE Electron Device Lett. EDL-6, 591 (1985).CrossRefGoogle Scholar
  38. 5.7
    H.J.W. van Houtum, I. Menting, A. Moet, M.L.J. Geyselaers and A.H. Reader, to be published.Google Scholar
  39. 5.8
    S.S. Wong, D.C. Chen, P. Merchant, T.R. Cass, J. Amano and K.Y. Chiu, IEEE Transactions on Electron Devices, ED-34 (3), 587 (1987).CrossRefGoogle Scholar
  40. 5.9
    H.J.W. van Houtum, A.A. Bos, A.G. M. Jonkers and I.J.M.M. Raaymakers, to be submitted to J. Appl. Phys.Google Scholar
  41. 5.10
    G.C.A.M. Janssen and P.J.J. Wessels, J. Appl. Phys. 62, 2993 (1987).Google Scholar
  42. 5.11
    I.J.M.M. Raaymakers, A.H. Reader and P.H. Oosting, J.Appl. Phys. 63, 2790 (1988).ADSCrossRefGoogle Scholar
  43. 5.12
    I.J.M.M. Raaymakers, A.H. Reader, H.J.W. van Houtum, J. Appl. Phys. 61, 2527 (1987).ADSCrossRefGoogle Scholar
  44. 5.13
    H.J.W. van Houtum, I.J.M.M. Raaymakers and T.J.M. Menting, J. Appl. Phys. 61, 3116 (1987).ADSCrossRefGoogle Scholar
  45. 5.14
    E.K. Broadbent, A.E. Morgan, B. Coulman, J.W. Huang, and A.E.T. Kuiper, Thin Solid Films, 151, 51 (1987).ADSCrossRefGoogle Scholar
  46. 5.15
    T. Brat, J.C.S. Wei, J. Poole, D. Hodul, N. Parikh and C. Wickersham, MRS Proc., 92, 191 (1987).CrossRefGoogle Scholar
  47. 5.16
    A.H. Reader, I.J. Raaymakers and H.J. van Houtum, Inst. Phys. Conf. Ser. No. 87, 523 (1987).Google Scholar
  48. 5.17
    R. Beyers and R. Sinclair, J. Appl. Phys. 57, 5240 (1985).ADSCrossRefGoogle Scholar
  49. 5.18
    A.H. Reader, A.H. van Ommen, and H.J.W. van Houtum, MRS Proc. 92, 177 (1987).CrossRefGoogle Scholar
  50. 5.19
    F.M. d’Heurle, F.K. LeGoues, and R. Joshi, Appl. Phys.Lett 48, 332 (1986).ADSCrossRefGoogle Scholar
  51. 5.20
    A.H. van Ommen, A.H. Reader and J.W.C. de Vries, J.Appl. Phys. 64, 3574 (1988).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Alec H. Reader
    • 1
  1. 1.Philips Research Labs.EindhovenThe Netherlands

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