Abstract
Scanning electron (SEM) and scanning transmission (STEM) electron microscopy are versatile, well established, techniques for characterisation of materials. Other papers in this volume attest to their widespread use for understanding semiconductors, and devices based on these various material combinations. This paper concentrates on studies performed in ultra-high vacuum (UHV), so that clean surfaces can be produced and maintained during the experiments. Under such conditions, several SEM and STEM signals have sensitivity at the monolayer (ML) level, so that true surface studies can be carried out.
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Venables, J.A., Bennett, P.A. (1989). Surface Studies by SEM and STEM. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_22
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DOI: https://doi.org/10.1007/978-1-4613-0527-9_22
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