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Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering in Group III-V Compound Semiconductor Alloys

  • Andrew G. Norman
Part of the NATO ASI Series book series (NSSB, volume 203)

Abstract

Ternary and quaternary Group III - V compound semiconductor alloys e.g. GaxIn1-xAs, AlxIn1-xAs, GaxIn1-xAsyP1-y etc. are important for a wide range of optoelectronic and microwave devices. For these devices the alloys are usually required in the form of thin epitaxial layers grown on binary compound substrates such as InP or GaAs. A variety of growth techniques are used to produce these epitaxial layers such as liquid phase epitaxy (LPE), vapour phase epitaxy (VPE), molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OMVPE).

Keywords

Epitaxial Layer High Resolution Electron Microscopy Tetrahedral Unit Liquid Phase Epitaxial Transmission Electron Diffraction 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Andrew G. Norman
    • 1
  1. 1.Department of Metallurgy and Science of MaterialsUniversity of OxfordOxfordUK

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