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The Fresnel Method for the Characterisation of Interfaces

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Book cover Evaluation of Advanced Semiconductor Materials by Electron Microscopy

Part of the book series: NATO ASI Series ((NSSB,volume 203))

Abstract

We describe here the work we have been doing in Cambridge over the last few years on the development and application of the “Fresnel Method” for the study of interfaces. The accuracy to which the shape and magnitude of a local compositional inhomogeneity can be measured using this approach is often startlingly high and our aim now is to encourage others to start to use the approach. While there are still several aspects of the technique which, as we will describe below, can cause difficulties, we have now used it for a sufficient number of different types of materials problems to be confident that the method has a future in compositional analysis at a spatial resolution at, or approaching, the atomic level. Arguably the method is far from new though, as yet, we seem to be alone in making a systematic study of its breadth of application in the analysis of compositional changes at grain and phase boundaries and in man-made layer systems.

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Authors and Affiliations

  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St, Cambridge, CB2 3QZ, UK

    W. M. Stobbs & F. M. Ross

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  1. W. M. Stobbs
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  2. F. M. Ross
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Editors and Affiliations

  1. University of Bristol, Bristol, UK

    David Cherns

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© 1989 Plenum Press, New York

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Stobbs, W.M., Ross, F.M. (1989). The Fresnel Method for the Characterisation of Interfaces. In: Cherns, D. (eds) Evaluation of Advanced Semiconductor Materials by Electron Microscopy. NATO ASI Series, vol 203. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0527-9_14

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  • DOI: https://doi.org/10.1007/978-1-4613-0527-9_14

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-7850-4

  • Online ISBN: 978-1-4613-0527-9

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