EBIC Studies of Individual Defects in Lightly Doped Semiconductors: CdTe as an Example

  • B. Sieber
Conference paper
Part of the NATO ASI Series book series (NSSB, volume 203)


Electron beam induced current (EBIC) experiments performed in the scanning electron microscope (SEM) are well-known to provide unique information, at a local scale, on bulk inhomogeneities and on electrically active extended defects in semiconductors1. The EBIC current arises from the collection of minority carriers created by the incident electron beam which are drifted by the electric field of a Schottky diode or of a p-n junction; they have been created in the space charge region (SCR) of the junction or they have reached the SCR by diffusion in the bulk of the semiconductor. The EBIC current is therefore material dependent through the minority carrier diffusion length L and through the SCR width W (W decreases when the doping level increases). Only the Schottky diode configuration where the junction is parallel to the surface and perpendicular to the electron beam, will be discussed in this paper, as it allows both imaging and quantitative characterization of bulk parameters of the semiconductor, as well as of extended defects. The accelerating beam voltage E0 used in EBIC experiments is also an important parameter, as it controls the electron penetration depth R of incident electrons in the material, and thus the depth from which the electrical information comes. The minority carriers created at a depth from the surface greater than W+L do not contribute to the collected current.


Diffusion Length Reverse Bias Minority Carrier Dark Spot Space Charge Region 
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  1. 1.
    International workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 1988). 18–20 july 1988, Meudon Bellevue, France. To be published in Rev. Phys. Appl.Google Scholar
  2. 2.
    C.J. Wu and D.B. Wittry, J. Appl. Phys. 49: 2827 (1978).CrossRefGoogle Scholar
  3. 3.
    J.W. Steeds, this issue.Google Scholar
  4. 4.
    P.M. Petroff, this issue.Google Scholar
  5. 5.
    C. Donolato, Optik, 52: 19 (1978/79); Appl. Phys. Lett. 34: 80 (1979).Google Scholar
  6. 6.
    B. Sieber, Philos. Mag. B 55: 585 (1987).Google Scholar
  7. 7.
    M. Kittler, Krist. Teknik. 15: 575 (1980).CrossRefGoogle Scholar
  8. 8.
    M. Kittler and W. Seifert, Phys. Stat. Sol. (a) 66: 573 (1981).CrossRefGoogle Scholar
  9. 9.
    H. Leamy, L.C. Kimerling and S.D. Ferris, Proc. 8th Int. Conf. on X-ray Optics and Microanalysis, Boston, p 625 (1977).Google Scholar
  10. 10.
    S. Mil’shtein, D.C. Joy, S.D. Ferris and L.C. Kimerling, Phys. Stat. Sol. (a) 84: 363 (1984).CrossRefGoogle Scholar
  11. 11.
    D.C. Joy and C.A. Pimentel, Inst. Phys. Conf. Series n° 76, 355 (1985).Google Scholar
  12. 12.
    B. Sieber and J. Philibert, Philos. Mag. B 55: 575 (1987).Google Scholar
  13. 13.
    C. Donolato, J. Phys. Paris, 9: C4–269 (1983).Google Scholar
  14. 14.
    J.L. Farvacque and B. Sieber, BIADS 1988, to be published in Rev. Phys. Appl.Google Scholar
  15. 15.
    D.F. Kyser, Proc. 6th Int. Conf. on X-Ray Optics and Microanalysis, Osaka, Ed G. Shinoda et al (University Tokyo Press) p 147 (1971).Google Scholar
  16. 16.
    B. Sieber and J.L. Farvacque, Inst. Phys. Conf. Series n° 87, 739 (1987).Google Scholar
  17. 17.
    K. Kanaya and S. Okayama, J. Phys. D 5: 43 (1972).Google Scholar
  18. 18.
    J.L. Farvacque and B. Sieber, unpublished results.Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • B. Sieber
    • 1
  1. 1.Laboratoire de Structure et Propriétés de l’Etat Solide, UA 234 Bâtiment C6Université des Sciences et Techniques de LilleVilleneuve d’AscqFrance

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