Intervalley Scattering as a Function of Temperature in Gaas Using Time-Resolved Visible Pump - IR Probe Absorption Spectroscopy
Understanding the detailed physics underlying intervalley scattering in multi-valley semiconductors is crucial for the efficient design of high-speed electronic and microwave devices and has been the subject of intense study over the past decade. Several experimental and theoretical studies based on ultrafast spectroscopy have been performed to obtain the scattering times for hot electrons going between the central, Γ6, valley and the satellite, X6 and L6, conduction band valleys in GaAs under various conditions.1,2 The techniques previously used involved investigations of the hot electron distribution only in the central, i.e., k=0, conduction band valley.
KeywordsFree Carrier Absorption Deformation Potential Initial Decay Intervalley Scattering Ultrafast Spectroscopy
Unable to display preview. Download preview PDF.
- 2.M. J. Kann, A. M. Kriman and D. K. Ferry, Effect of electron-electron scattering on intervalley transition rates of photoexcited carriers in GaAs, Phys. Rev. B41: 12 659 (1990).Google Scholar
- 6.E. Conwell, High field transport in semiconductors, in“Solid State Physics, Advances in Research and Applications”, Supp. 9, F. Seitz, D. Turnbull, and H. Ehrenreich, eds., Academic Press, New York (1967).Google Scholar