Intervalley Scattering as a Function of Temperature in Gaas Using Time-Resolved Visible Pump - IR Probe Absorption Spectroscopy

  • Michael A. Cavicchia
  • Wubao Wang
  • R. R. Alfano


Understanding the detailed physics underlying intervalley scattering in multi-valley semiconductors is crucial for the efficient design of high-speed electronic and microwave devices and has been the subject of intense study over the past decade. Several experimental and theoretical studies based on ultrafast spectroscopy have been performed to obtain the scattering times for hot electrons going between the central, Γ6, valley and the satellite, X6 and L6, conduction band valleys in GaAs under various conditions.1,2 The techniques previously used involved investigations of the hot electron distribution only in the central, i.e., k=0, conduction band valley.


Free Carrier Absorption Deformation Potential Initial Decay Intervalley Scattering Ultrafast Spectroscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    D. W. Bailey, C. J. Stanton, K. Hess, M. J. LaGasse, R. W. Schoenlein, and J. G. Fujimoto, Femtosecond studies of intervalley scattering in GaAs and AlxGa1-xAs, Solid State Electron. 32: 1491 (1989).ADSCrossRefGoogle Scholar
  2. 2.
    M. J. Kann, A. M. Kriman and D. K. Ferry, Effect of electron-electron scattering on intervalley transition rates of photoexcited carriers in GaAs, Phys. Rev. B41: 12 659 (1990).Google Scholar
  3. 3.
    W. B. Wang, N. Ockman, M. Yan, and R. R. Alfano, Determination of X6 valley hot electron dynamics and the intervalley X6 → Γ6 scattering time in GaAs, J. Lumin50: 347 (1992).CrossRefGoogle Scholar
  4. 4.
    X. Q. Zhou, K. Leo, and H. Kurz, Ultrafast relaxation of photoexcited holes in n-doped III-V compounds studied by femtosecond luminescence, Phys. Rev. B45: 3886 (1992).ADSCrossRefGoogle Scholar
  5. 5.
    C. J. Stanton and D. W. Bailey, Rate equations for the study of femtosecond intervalley scattering in compound semiconductors, Phys. Rev. B45: 8369 (1992).ADSCrossRefGoogle Scholar
  6. 6.
    E. Conwell, High field transport in semiconductors, in“Solid State Physics, Advances in Research and Applications”, Supp. 9, F. Seitz, D. Turnbull, and H. Ehrenreich, eds., Academic Press, New York (1967).Google Scholar
  7. 7.
    S. Zollner, S. Gopalan, and M. Cardona, Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates, J. Appl. Phys.68: 1682 (1990).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1996

Authors and Affiliations

  • Michael A. Cavicchia
    • 1
  • Wubao Wang
    • 1
  • R. R. Alfano
    • 1
  1. 1.Institute for Ultrafast Spectroscopy and Lasers, New York State Center for Advanced Technology for Ultrafast Photonic Materials and Applications, Physics DepartmentThe City College and The Graduate School of the City University of New YorkNew YorkUSA

Personalised recommendations