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Relaxation Processes in GaAs And InGaAs V-Shaped Quantum Wires

  • R. Cingolani
  • R. Rinaldi
  • P. V. Giugno
  • M. Lomascolo
  • M. DiDio
  • U. Marti
  • D. Martin
  • F. K. Reinhart

Abstract

We investigated the relaxation of excitons and free-carriers in V-shaped GaAs and InGaAs quantum wires with distinct one-dimensional properties. Trapping of carrier in the wires and simultaneous recombination of higher index transitions are studied by spectrally and time resolved luminescence measurements performed at the relevant energies of the quantized states observed in photoluminescence excitation spectra. The effect of disorder in low-crystalline quality quantum wires (inferred by TEM studies) is also discussed.

Keywords

Decay Time Quantum Wire Wire Sample Band Filling Photoluminescence Excitation Spectrum 
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Copyright information

© Springer-Verlag US 1996

Authors and Affiliations

  • R. Cingolani
    • 1
  • R. Rinaldi
    • 1
  • P. V. Giugno
    • 1
  • M. Lomascolo
    • 2
  • M. DiDio
    • 2
  • U. Marti
    • 3
  • D. Martin
    • 3
  • F. K. Reinhart
    • 3
  1. 1.Dipartimento Scienza dei MaterialiUniversita’ di LecceLecceItaly
  2. 2.CNRSM-PastisBrindisiItaly
  3. 3.Institute de Micro-OptoelectroniqueEPFLLausanneSwitzerland

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