A Theoretical Estimate of Coherence Effects in the Femtosecond Spectroscopy of Bulk Semiconductors
A recently developed combined density-matrix and Monte-Carlo description of the femtosecond laser-pulse spectroscopy of bulk semiconductors is extended to explore the possibility of experimentally detectable coherence effects in the nonexcitonic regime at high excitation densities, and here in particular of Rabi-type density oscillations and corresponding oscillations in the time resolved degenerate pump-and-probe absorption spectroscopy. The analysis contains the first numerical evaluation of so-called higher-order polarisation scatterings. For GaAs as reference material these calculations allow to determine the essential experimental prerequi-sits for a demonstration of Rabi-type oscillatory effects in a laser-pulse excited bulk semiconductor.
KeywordsRecombination Coherence GaAs Haas
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