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Negative Differential Mobility and Convective Instability of a Semiconductor Superlattice

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Hot Carriers in Semiconductors
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Abstract

Although narrow-miniband superlattices have an important transport inhomogeneity manifested in the formation of high-field domains and in periodic structure of the I-V characteristic when the applied voltage increases beyond a threshold,1 the most interesting transport phenomena in wide-miniband systems are those related to Esaki-Tsu negative differential mobility (NDM) at relatively low electric field.2 We report here on a careful examination of the frequency dependence of small-signal ac mobility and the possible fluctuation instability of a planar superlattice subject to negative differential miniband conductance. Our analysis is based on three-dimensional hydrodynamic nonlinear balance equations with accurate microscopic treatment of phonon and impurity scatterings.

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REFERENCES

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© 1996 Plenum Press, New York

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Lei, X.L., Horing, N.J.M., Cui, H.L., Thornber, K.K. (1996). Negative Differential Mobility and Convective Instability of a Semiconductor Superlattice. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_45

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_45

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

  • eBook Packages: Springer Book Archive

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