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Spin-flip Dynamics of Excitons in GaAs Quantum Wells

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Hot Carriers in Semiconductors
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Abstract

Several recent studies [1–3] have attempted to determine how excitons in quantum wells can flip their spin. In GaAs quantum wells, excitons in the ground state can have either total spin J=1 or J=2, since they are comprised of a spin-1/2 conduction electron and a spin-3/2 hole. While a number of studies have examined the flip from +1 to -1 spin states, little experimental work has directly addressed the processes by which J=2, or “dark,” excitons, can convert to J=1 excitons. Since J=2 excitons do not couple to a single photon, in most experiments they can not be observed, and therefore unverifiable assumptions are made about their behavior.

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© 1996 Plenum Press, New York

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Lohner, A., Snoke, D., Rühle, W.W., Kühler, K. (1996). Spin-flip Dynamics of Excitons in GaAs Quantum Wells. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_4

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

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