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Hot Carriers in Semiconductors pp 85–88Cite as

Hot Electrons and Noneequilibrium Phonons in Multiple δ-Doped GaAs

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Abstract

The hot carrier intersubband transfer in V-shaped multiple quantum wells (VMQW) is investigated as a function of electric field strength by time of flight spectra of phonons emitted by hot carriers, differential conductivity, and time resolved changes of the current induced by nonequilibrium phonons generated by a heater. Since the mobilities in the various subbands differ significantly, carrier heating and consequently the phonon emission by the heated carriers differ, too. Therefore, specific features can be observed, which reflect the change of subband population by applied fields.

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References

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Author information

Authors and Affiliations

  1. Paul-Drude-Insitut für Festkörpereltronik, Hausvogteiplatz 5–7, 10117, Berlin, Germnay

    M. Asche, P. Kleinert, R. Hey & H. Kostial

  2. Institute of Physics of the Ukrainian Academy of Sciences, Prospect Nauki 46, Kiev, 252650, Ukraine

    B. Danilchenko, A. Klimashov & S. Roshko

Authors
  1. M. Asche
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  2. P. Kleinert
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  3. R. Hey
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  4. H. Kostial
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  5. B. Danilchenko
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  6. A. Klimashov
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  7. S. Roshko
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Editor information

Editors and Affiliations

  1. University of Illinois at Urbana — Champaign, Urbana, Illinois, USA

    Karl Hess , Jean-Pierre Leburton  & Umberto Ravaioli ,  & 

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© 1996 Plenum Press, New York

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Asche, M. et al. (1996). Hot Electrons and Noneequilibrium Phonons in Multiple δ-Doped GaAs. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_20

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_20

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

  • eBook Packages: Springer Book Archive

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