Hot Electrons and Noneequilibrium Phonons in Multiple δ-Doped GaAs
The hot carrier intersubband transfer in V-shaped multiple quantum wells (VMQW) is investigated as a function of electric field strength by time of flight spectra of phonons emitted by hot carriers, differential conductivity, and time resolved changes of the current induced by nonequilibrium phonons generated by a heater. Since the mobilities in the various subbands differ significantly, carrier heating and consequently the phonon emission by the heated carriers differ, too. Therefore, specific features can be observed, which reflect the change of subband population by applied fields.
KeywordsOptical Phonon Phonon Emission Intersubband Transition Carrier Heating Weak Field Limit
Unable to display preview. Download preview PDF.
- 1.H. KostiaL T.Ihn, P. Kleinert, R. Hey, M. Asche, and F.Koch, Phys. Rev. B 47, 4485 (1993)Google Scholar
- 2.M. Asche. R. Hey, H. Kostial, B. Danilchenko, A. Klimashov, and S. Roshko, Phys. Rev. B 12, 7966 (1995)Google Scholar
- 5.J. K. Wigmore, A. J. Kent, O. H. Hughes, and L. J. Challis, Semicond. Sci. Technol. 7 B, 29 (1992)Google Scholar