Room Temperature 10 µm Intersubband Lasers based on Carrier Capture Processes in Step Quantum Wells

  • X. Zhang
  • G. I. Haddad


In this work, a new room temperature intersubband laser at 10 µm wavelength is proposed in which population inversion is achieved between subbands in a step quantum well based on carrier capture processes. It is known that in quantum well structures, emission of LO phonons is the main carrier capture mechanism. The LO-phonon scattering rate depends on the Froehlich matrix element and the overlap of the initial and final wave functions squared1,2. In a step quantum well with a high ratio of the step width to the well width the wave function overlap of the state in the step and the state in the well is reduced and thus a lower LO-phonon scattering rate and a longer capture time result. The carriers in the ground state in the well can be removed by a coupled quantum well by tunneling and thus population inversion can be realized.


Population Inversion Quantum Cascade Laser Step Quantum Carrier Capture Phonon Assisted Tunneling 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    P.W.M.Blom, C.Smit, J.E.M.Haverkort, and J.H.Wolter, Carrier capture into a semiconductor quantum well, Phys. Rev. B, 47: 2072 (1992).ADSCrossRefGoogle Scholar
  2. 2.
    D.Morris, B.Deveaud, A.Regreny, and P.Auvray, Electron and hole capture in multiple-quantum-well structures, Phys. Rev. B, 47:6819 (1992).ADSCrossRefGoogle Scholar
  3. 3.
    X.Zhang, G.I.Haddad, J.P.Sun, A.Afzali-Kushaa, C.Y.Sung and T.B.Norris, Population inversion in step quantum wells at 10 μm wavelength, 53rd Device Research Conference, Session VA, Charlottesville, Virginia, (1995).Google Scholar
  4. C.Y.Sung, T.B.Norris, X. Zhang, M.Sneed and P.K. Bhattacharya, Directly time-resolved carrier capture process in semiconductor qiiantum well, CLEO/QELS ‘95, Baltimore Maryland, (1995).Google Scholar
  5. 5.
    F.Capasso, H.M.Cox, S.G.Hummel, Pseudo-quaternary GalnAsP semiconductors: A new GalnAs/Inp graded gap superlattice and its applications to avalanche photodiodes, Appl. Phys. Lett, 45:1193 (1984).ADSCrossRefGoogle Scholar
  6. 6.
    J. Faist, F.Capasso, D.L.Sivco, C.Sirtori, A.L.Hutchinson, A.Y.Cho, Quantum cascade laser, Science, 264:553 (1994).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1996

Authors and Affiliations

  • X. Zhang
    • 1
  • G. I. Haddad
    • 1
  1. 1.Solid State Electronics Laboratory, Department of EECSThe University of MichiganAnn ArborUSA

Personalised recommendations