Room Temperature 10 µm Intersubband Lasers based on Carrier Capture Processes in Step Quantum Wells
In this work, a new room temperature intersubband laser at 10 µm wavelength is proposed in which population inversion is achieved between subbands in a step quantum well based on carrier capture processes. It is known that in quantum well structures, emission of LO phonons is the main carrier capture mechanism. The LO-phonon scattering rate depends on the Froehlich matrix element and the overlap of the initial and final wave functions squared1,2. In a step quantum well with a high ratio of the step width to the well width the wave function overlap of the state in the step and the state in the well is reduced and thus a lower LO-phonon scattering rate and a longer capture time result. The carriers in the ground state in the well can be removed by a coupled quantum well by tunneling and thus population inversion can be realized.
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