Hot Carrier Effects in Femtosecond Gain Dynamics of InGaAs/AlGaAs Quantum Well Lasers

  • G. D. Sanders
  • C. J. Stanton
  • C. K. Sun
  • B. Golubovic
  • J. G. Fujimoto

Abstract

Ultrafast optical nonlinearities in semiconductors play a central role in determining transient amplification and pulse-dependent gain saturation in quantum-well diode lasers. Both carrier-phonon and carrier-carrier scattering are expected to influence the nonlinearities. In this paper, we investigate hot electron effects on the semiconductor gain dynamics of strained-layer quantum well lasers. We present a relaxation time approximation model for carrier-carrier scattering in strained layer lasers. The relaxation approximation makes the problem an effective one dimensional problem which can then be solved directly using an adaptive Runge Kutta routine1. This procedure requires substantially less computational resources than a full Monte Carlo simulation. Results show that the inclusion of carrier-carrier scattering improves previous results with only carrier-phonon scattering.

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References

  1. [1]
    G. D. Sanders, C.-K. Sun, J. G. Fujimoto, H. K. Choi, C. A. Wang, and C. J. Stanton, Phys. Rev. B50, 8539 (1994).ADSGoogle Scholar
  2. [2]
    N. S. Wingreen, C. J. Stanton, and J. W. Wilkins, Phys. Rev. Lett. 57, 1084 (1986).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1996

Authors and Affiliations

  • G. D. Sanders
    • 1
    • 2
  • C. J. Stanton
    • 1
    • 2
  • C. K. Sun
    • 3
  • B. Golubovic
    • 3
  • J. G. Fujimoto
    • 3
  1. 1.Mikroelektronik CentretDanmarks Tekniske UniversitetLyngbyDenmark
  2. 2.Dept. of PhysicsUniversity of FloridaGainesvilleUSA
  3. 3.Department of Electrical Engineering and Computer ScienceMassachusetts Institute of TechnologyCambridgeUSA

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