Hole Transport in a Strained SI Layer Grown on a Relaxed ( 001 )-Si(1−x)Gex Substrate

  • J. E. Dijkstra
  • W. Th. Wenckebach

Abstract

Transport of holes in strained silicon layers grown on a (001)Si(1−x)Ge x substrate is gaining interest because of the possibility to fabricate high performance PMOS devices with this material. Nayak1 reported the observation of a high mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si. This high mobility is attributed to the strain of the Si in the p-channel. Later, in a theoretical article Nayak2 calculated the in-plane mobility in strained Si using \(\vec k \cdot \vec p\) theory and a relaxation time method for vanishing small electric fields. The results of his calculations show an increase of the mobility with a factor 6 for strained Si grown on a Si0.8Ge0.2 substrate as compared to unstrained Si.

Keywords

Anisotropy Germanium 

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References

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Copyright information

© Plenum Press, New York 1996

Authors and Affiliations

  • J. E. Dijkstra
    • 1
  • W. Th. Wenckebach
    • 1
  1. 1.Faculty of Applied PhysicsDelft University of TechnologyDelftThe Netherlands

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