Hole Transport in a Strained SI Layer Grown on a Relaxed ( 001 )-Si(1−x)Gex Substrate
Transport of holes in strained silicon layers grown on a (001)Si(1−x)Ge x substrate is gaining interest because of the possibility to fabricate high performance PMOS devices with this material. Nayak1 reported the observation of a high mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si. This high mobility is attributed to the strain of the Si in the p-channel. Later, in a theoretical article Nayak2 calculated the in-plane mobility in strained Si using \(\vec k \cdot \vec p\) theory and a relaxation time method for vanishing small electric fields. The results of his calculations show an increase of the mobility with a factor 6 for strained Si grown on a Si0.8Ge0.2 substrate as compared to unstrained Si.
KeywordsDrift Velocity Optical Phonon Scatter Rate Hole Transport Drift Mobility
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- 2.D.K. Nayak and S.K. Chun. Low-field mobility of strained Si on (100) Si(1_x)Gexsubstrate. Appl. Phys. Lett., 64 (19): 2514–2516, May 1994.Google Scholar