Abstract
This chapter deals with the binding energies of semiconductors and their ordered alloys. Disordered alloys will be treated in Chapter 4. The cohesive energy and alloy excess energy will be defined and their values presented. Several important theoretical models for the total energy calculation, including density functional theory, the tight-binding approach, and Harrison’s bond-orbital model, will be introduced. The concept of polarity will be discussed within the tight-binding approach and compared with the Phillips (1973) ionicity factor. Finally, we will show that the excess energies for long-range ordered alloys are mostly positive, implying they are nonequilibrium states formed during growth.
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© 1995 Plenum Press, New York
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Chen, AB., Sher, A. (1995). Bonding in Ordered Structures. In: Chen, AB., Sher, A. (eds) Semiconductor Alloys. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0317-6_2
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DOI: https://doi.org/10.1007/978-1-4613-0317-6_2
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