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Ensemble Monte Carlo Simulations of Ultrafast Phenomena in Semiconductors

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Ultrafast Phenomena in Semiconductors

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Abstract

Monte Carlo simulation has been shown to be an effective approach to the study of ultrafast carrier relaxation and interaction in semiconductor bulk materials and in microstructures. In this chapter we will review the use of this methodology to study electron-electron, electron-hole, nonequilibrium and confined phonons, in-tersubband relaxation in quantum wells, and carrier collision effects on the short time scale in connection with ultrafast optical experiments. Also, we consider the use of Monte Carlo simulation in modeling optoelectronic devices such as lasers and electroluminescent devices. Finally, we will discuss some of the limitations of the Monte Carlo technique, such as the treatment of coherent effects.

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Authors
  1. David K. Ferry
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  2. Stephen M. Goodnick
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Editors and Affiliations

  1. Department of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287, USA

    Kong-Thon Tsen

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Ferry, D.K., Goodnick, S.M. (2001). Ensemble Monte Carlo Simulations of Ultrafast Phenomena in Semiconductors. In: Tsen, KT. (eds) Ultrafast Phenomena in Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-0203-2_6

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