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Electron Velocity Overshoot, Electron Ballistic Transport, and Nonequilibrium Phonon Dynamics in Nanostructure Semiconductors

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Ultrafast Phenomena in Semiconductors

Abstract

In this chapter we begin with a review of various experimental techniques in the literature that have been employed to study electron velocity overshoot and ballistic electron transport phenomena in semiconductors. In particular, the experimental technique, time-resolved Raman spectroscopy, which is the only experimental technique capable of directly measuring electron distribution function, electron drift velocity, and nonequilibrium longitudinal optical phonon population during the electron transient transport, is emphasized and elaborated. The observations of electron velocity overshoot as well as nonequilibrium longitudinal optical phonon dynamics in GaAs, Al x Ga1−x As(x = 0.3), and InP-based p-i-n semiconductor nanostructures are presented and discussed. In addition, electron ballistic transport in an InP-based p-i-n nanostructure is demonstrated and discussed. The measured nonequilibrium longitudinal optical phonon populations are correlated with the observed electron distribution functions during the electron transient transport, and a comprehensive picture of these novel transient phenomena is obtained. Finally, some future important experiments as well as possible device applications based upon these novel transient carrier transport phenomena are addressed.

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Tsen, KT. (2001). Electron Velocity Overshoot, Electron Ballistic Transport, and Nonequilibrium Phonon Dynamics in Nanostructure Semiconductors. In: Tsen, KT. (eds) Ultrafast Phenomena in Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-0203-2_4

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  • DOI: https://doi.org/10.1007/978-1-4613-0203-2_4

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