Misfit, Strain, and Dislocations in Epitaxial Structures: Si/Si, Ge/Si, Si/Al2O3

  • J. Blanc


The growth of an epitaxial semiconductor layer on an insulating substrate (or vice versa) will in general lead to the development of strain in the composite structure because of lattice mismatch between the two substances or because of differential thermal contraction between the two layers. The strain may or may not be relieved, in whole or in part, by introduction of strain-or misfit-relieving dislocations, or cracks.


Dislocation Density Epitaxial Layer Misfit Dislocation Lattice Misfit Epitaxial Structure 
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© Springer Science+Business Media New York 1978

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  • J. Blanc

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