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Heteroepitaxial Growth and Characterization of Compound Semiconductors

  • C. C. Wang

Abstract

The achievement of single crystal growth of large-area semiconductor films on substrates of different materials is of technological importance to many solid state electronic devices. The heteroepitaxial composite structure is also of scientific interest because the epitaxy is determined by the spatial relationship between the atomic arrangement in the substrate and that of the atoms in the appropriate crystallographic plane of the semiconductor. The degree of crystalline perfection of the semiconductor deposits further depends largely on the physicochemical nature of the substrate surfaces.

Keywords

Sapphire Substrate Compound Semiconductor Solid State Electronics Single Crystal Growth GaAs Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. Allen, G. A., J. Phys. D-4: 308 (1971).Google Scholar
  2. Allenson, M. B., P. G. R. King, M. C. Rowland, G. J. Steward, and C. H. A. Syms, J. Phys. D-5: 189 (1972).Google Scholar
  3. Andrew, D., J. P. Gowers, J. A. Henderson, M. J. Plummer, B. J. Stocker, and A. A. Turnbull, J. Phys. 3: 320 (1970).ADSGoogle Scholar
  4. Ang, C. Y. and H. M. Manasevit, Solid State Electronics 8: 994 (1965).ADSCrossRefGoogle Scholar
  5. Antypas, G. A., L. W. James, and J. U. Uebbing, J. Appl. Phys. 41: 2888 (1970).ADSCrossRefGoogle Scholar
  6. Austerman, S. B., J. Nucl. Mat. 14: 225 (1964).ADSCrossRefGoogle Scholar
  7. Barker, A. S., Jr., Phys. Rev. 132: 1474 (1963).ADSCrossRefGoogle Scholar
  8. Bass, J. C., Gallium Arsenide and Related Compounds (K. Paulus, Ed.) London: The Institute of Physics (1971).Google Scholar
  9. Behrudt, K. H., Solid State Electronics 14: 191 (1971).ADSCrossRefGoogle Scholar
  10. Bell, R. L., Negative Electron Affinity Devices, Oxford: Clarendon Press (1973).Google Scholar
  11. Bell, R. L. and W. E. Spicer, Proc. IEEE 58: 1788 (1970).CrossRefGoogle Scholar
  12. Bloom, S., J. Phys. Chem. Solids 32: 2027 (1971).ADSCrossRefGoogle Scholar
  13. Bradshaw, A. and J. E. Knappett, Solid State Tech. 13: 45 (1970).Google Scholar
  14. Budo, Y. and J. Priest, Solid State Electronics 6: 159 (1963).ADSCrossRefGoogle Scholar
  15. Calm, J. W. and R. E. Hanneman, Surface Sci. 1: 387 (1964).ADSCrossRefGoogle Scholar
  16. Carr, P. H., IEEE Trans. MTT-17: 845 (1969).Google Scholar
  17. Chu, T. L. and R. K. Smeltzer, J. Vac. Sci. and Tech. 10: 1 (1973).ADSCrossRefGoogle Scholar
  18. Collins, J. H., P. J. Hagon, and G. R. Pulliam, Ultrasonics 8: 218 (1970).CrossRefGoogle Scholar
  19. Conard, R. W., R. A. Reynolds, and M. W. Jeffcoat, Solid State Electronics 10: 507 (1967).ADSCrossRefGoogle Scholar
  20. Connolly, T. F., Solid State Physics Literature Guides, Vol. 2: Semiconductors-Preparation, Crystal Growth, and Selected Properties, New York: IFT/Plenum (1972).Google Scholar
  21. Cullen, G. W., J. Crystal Growth 9: 107 (1971).ADSCrossRefGoogle Scholar
  22. Denhartag, J. P., Advanced Strength of Materials, New York: McGraw Hill Book Co. (1952).Google Scholar
  23. Didchenko, R., J. E. Alix, and R. H. Toeniskoetter, J. Inorg. Nucl. Chem. 14: 35 (1960).CrossRefGoogle Scholar
  24. Dismukes, J. P., W. M. Yim, and V. S. Ban, J. Crystal Growth 13/14: 365 (1972).Google Scholar
  25. Duffy, M. T. and C. C. Wang, private communication, RCA Laboratories, Princeton, NJ (1974).Google Scholar
  26. Duffy, M. T., C. C. Wang, G. D. O’Clock, Jr., S. H. McFarlane III, and P. J. Zanzucchi, J. Electronic Materials 2: 359 (1973).ADSCrossRefGoogle Scholar
  27. Dugue, M., J. F. Goullin, P. Merenda, and M. Moulin, Preparative Methods in Solid State Chemistry (P. Hagenmuller, Ed.) New York: Academic Press (1972).Google Scholar
  28. Dumin, D. J.,. Appl. Phys. 36: 2700 (1965).CrossRefGoogle Scholar
  29. Feist, W. M., S. R. Steele, and D. W. Readey, Physics of Thin Films, Vol. 5 ( G. Hass and R. E. Thun, Eds.) New York: Academic Press (1969).Google Scholar
  30. Filby, J. D., Modern Oxide Materials (B. Cockayne and D. W. Jones, Eds.) New York: Academic Press (1972).Google Scholar
  31. Fisher, D. G., R. E. Enstrom, J. S. Escher, H. F. Gossenber- ger, and J. R. Appert, IEEE Trans. ED-21: 641 (1974).Google Scholar
  32. Francombe, M. H. and J. E. Johnson, Physics of Thin Films, Vol. 5 ( G. Hass and R. E. Thun, Eds.) New York: Academic Press (1969).Google Scholar
  33. Galli, G. and J. E. Coker, Appl. Phys. Letters 16: 439 (1970).ADSCrossRefGoogle Scholar
  34. Gandolfo, D. A., RCA Engineer 15: 54 (1969).Google Scholar
  35. Gutierrez, W. A. and H. D. Pommerrenig, Appl. Phys. Letters 22, 292 (1973).ADSCrossRefGoogle Scholar
  36. Gutierrez, W. A., H. D. Pommerrenig, and M. A. Jasper, Solid State Electronics 13: 1199 (1970).ADSCrossRefGoogle Scholar
  37. Hughes, F. R., E. D. Savoye, and D. L. Thoman, J. Elect. Materials 3: 9 (1974).ADSCrossRefGoogle Scholar
  38. Ilegems, M., J. Crystal Growth 13/14: 360 (1972).Google Scholar
  39. Ito, S., T. Shinohara, and Y. Seki, J. Electrochem. Soc. 120: 1419 (1973).CrossRefGoogle Scholar
  40. Jain, W. K. and S. H. Sharma, Solid State Electronics 13 1145 (1970).ADSCrossRefGoogle Scholar
  41. James, L. W., G. A. Antypass, J. Edgecumbe, R. L. Moon, and R. L. Bell, J. Appl. Phys. 42: 4976 (1971).ADSCrossRefGoogle Scholar
  42. Jones, C. E. and A. R. Hilton, J. Electrochem. Soc. 112: 908 (1965).CrossRefGoogle Scholar
  43. Joyce, B. A., The Use of Thin Films in Physical Investigation (J. C. Anderson, Ed.) New York: Academic Press (1966).Google Scholar
  44. Joyce, B. A., Rep. Prog. Phys. 37: 363 (1974).ADSCrossRefGoogle Scholar
  45. Knight, J. R., D. Eller, and P. R. Evans, Solid State Electronics 8: 178 (1965).ADSCrossRefGoogle Scholar
  46. Ladany, I., S. H. McFarlane III, and S. J. Bass, J. Appl. Phys. 40: 4984 (1969).ADSCrossRefGoogle Scholar
  47. Ladany, I. and C. C. Wang, J. Appl. Phys. 43: 236 (1972).ADSCrossRefGoogle Scholar
  48. Ladany, I. and C. C. Wang, Solid State Electronics 17: 573 (1974).ADSCrossRefGoogle Scholar
  49. Lang, A. R., J. Appl. Phys. 30: 1748 (1959).ADSCrossRefGoogle Scholar
  50. Lewis, M. F. and E. Patterson, J. Appl. Phys. 39: 3420 (1968).ADSCrossRefGoogle Scholar
  51. Liu, Y. Z., J. L. Moll, and W. E. Spicer, Appl. Phys. Letters 17: 60 (1970).ADSCrossRefGoogle Scholar
  52. Manasevit, H. M., Appl. Phys. Letters 12: 156 (1968).ADSCrossRefGoogle Scholar
  53. Manasevit, H. M., J. Electrochem. Soc. 118: 647 (1971).CrossRefGoogle Scholar
  54. Manasevit, H. M., J. Crystal Growth 13/14: 306 (1972).Google Scholar
  55. Manasevit, H. M., J. Crystal Growth 22: 125 (1974).ADSCrossRefGoogle Scholar
  56. Manasevit, H. M. and W. I. Simpson, J. Electrochem. Soc. 116: 1725 (1969).CrossRefGoogle Scholar
  57. Manasevit, H. M. and W. I. Simpson, J. Electrochem. Soc. 118 644 (1971A).Google Scholar
  58. Manasevit, H. M. and W. I. Simpson, J. Electrochem. Soc. 118: 291c (1971B).Google Scholar
  59. Manasevit, H. M. and A. C. Thorsen, Met. Trans. 1: 623 (1970).CrossRefGoogle Scholar
  60. Manasevit, H. M. and A. C. Thorsen, J. Electrochem. Soc. 119: 99 (1972).CrossRefGoogle Scholar
  61. Manasevit, H. M., R. L. Nolder, and L. A. Moudy, Trans. Metall. Soc. AIME 242: 465 (1968).Google Scholar
  62. Manasevit, H. M., F. M. Erdmann, and W. I. Simpson, J. Electrochem. Soc. 118: 1864 (1971).CrossRefGoogle Scholar
  63. Manasevit, H. M., J. E. Coker, F. A. Pizzaello, and R. P. Ruth, Contract Report No. AFML-TR-73–295, Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio (1974).Google Scholar
  64. Martinelli, R. U. and D. G. Fisher, Proc. IEEE 62: 1339 (1974).ADSCrossRefGoogle Scholar
  65. Maruska, H. P. and J. J. Tietjen, Appl. Phys. Letter 15: 327 (1969).ADSCrossRefGoogle Scholar
  66. McFarlane, S. H., III, private communication, RCA Laboratories, Princeton, NJ (1974).Google Scholar
  67. McFarlane, S. H., III and C. C. Wang, J. Appl. Phys. 43: 1724 (1972).ADSCrossRefGoogle Scholar
  68. Mehal, E. W. and R. W. Walker, IEEE Trans. ED-15: 513 (1968).Google Scholar
  69. Minden, H. T., Solid State Tech. 12: 25 (1969).Google Scholar
  70. Narayan, S. Y. and C. C. Wang, unpublished, RCA Laboratories, Princeton, NJ (1972).Google Scholar
  71. Nelson, H., RCA Review 24: 603 (1963).Google Scholar
  72. Neuberger, M., Handbook of Electronic Materials, Vol. 2, New York: IFT/Plenum (1971).CrossRefGoogle Scholar
  73. Owens, J. M., Proc. IEEE 59: 930 (1971).CrossRefGoogle Scholar
  74. Page, D. J., Solid State Electronics 11: 87 (1968).ADSCrossRefGoogle Scholar
  75. Pankove, J. I., J. Luminescence 7: 114 (1973).ADSCrossRefGoogle Scholar
  76. Pankove, J. I. and M. A. Lampert, Phys. Rev. Letters 33: 361 (1974).ADSCrossRefGoogle Scholar
  77. Pankove, J. I. and P. E. Norris, RCA Review 33: 377 (1972).Google Scholar
  78. Pankove, J. I., J. E. Berkeyheiser, H. P. Maruska, and J. Wittke, Solid State Commun. 8: 1051 (1970).ADSCrossRefGoogle Scholar
  79. Pankove, J. I., J. E. Berkeyheiser, and E. A. Miller, J. Appl. Phys. 45: 1280 (1974).ADSCrossRefGoogle Scholar
  80. Pashley, D. W., Prog. Surface Sci. 3: 23 (1972).Google Scholar
  81. Pastrnak, J. and L. Roskovcova, Phys. Status Solidi 26: 591 (1968).CrossRefGoogle Scholar
  82. Perlman, B. S., L. C. Upadhyayula, and W. W. Siekanowicz, Proc. IEEE 59. 1229 (1971).CrossRefGoogle Scholar
  83. Rai-Choudhury, P., J. Electrochem. Soc. 116: 1745 (1969).CrossRefGoogle Scholar
  84. Reisman, A., M. Berkenblit, J. Cuomo, and S. A. Chan, J. Electrochem. Soc. 118: 1653 (1971).CrossRefGoogle Scholar
  85. Schlotterer, H., Solid State Electronics 11: 947 (1968)ADSCrossRefGoogle Scholar
  86. Schwartz, B., Vapor Deposition (C. F. Powell, J. H. Oxley, and J. M. Blocher, Jr., Eds.) New York: John Wiley and Sons: (1966).Google Scholar
  87. Scrupski, S. E., Electronics 40: 106 (1967).Google Scholar
  88. Shaw, D. W., Crystal Growth, Theory and Techniques, Vol. 1 ( C. H. L. Goodman, Ed.) New York: Plenum Press (1974).Google Scholar
  89. Simon, R. E., IEEE Spectrum 9: 74 (1972).CrossRefGoogle Scholar
  90. Sobol, H., Advances in Microwaves (L. Young and H. Sobol, Eds.) New York: Academic Press (1974).Google Scholar
  91. Sobol, H. and M. Caulton, Advances in Microwaves (L. Young and H. Sobol, New York: Academic Press (1974).Google Scholar
  92. Sommer, A. H., Photoemissive Materials, New York: John Wiley and Sons (1968).Google Scholar
  93. Sommer, A. H., RCA Review 34: 95 (1973).Google Scholar
  94. Sommer, A. H., J. Phys. (Paris) 34: C6–51 (1974).Google Scholar
  95. Spitzer, W. G. and J. M. Whelan, Phys. Rev. 114: 59 (1959).ADSCrossRefGoogle Scholar
  96. Statz, H. and W. V. Munch, Solid State Electronics 12: 111 (1969).ADSCrossRefGoogle Scholar
  97. Stern, E., IEEE Trans. MIT-17: 835 (1969).Google Scholar
  98. Syms, C. H. A., Adv. in Electronics and Electron Physics,Vol. 28A (L. Morton, Ed.) New York: Academic Press (1969).Google Scholar
  99. Thorsen, A. C. and H. M. Manasevit, J. Appl. Phys. 42: 2519 (1971).ADSCrossRefGoogle Scholar
  100. Thorsen, A. C., H. M. Manasevit, and R. H. Harada, Solid State Electronics 17: 855 (1974).ADSCrossRefGoogle Scholar
  101. Tietjen, J. J., R. E. Enstrom, V. S. Ban, and D. Richman, Solid State Tech. 15: 42 (1972).Google Scholar
  102. Turnbull, W. R., Semiconductor Thin Films, AD 655 100, Washington, DC: U.S. Department of Commerce (1967).Google Scholar
  103. van Laar, J., Acta Electron. 16: 215 (1973).Google Scholar
  104. Wang, C. C., J. Appl. Phys. 40: 3433 (1969).ADSCrossRefGoogle Scholar
  105. Wang, C. C., unpublished, RCA Laboratories, Princeton, N.J (1973).Google Scholar
  106. Wang, C. C. (RCA Laboratories, Princeton, N.J.), unpublished, (1974).Google Scholar
  107. Wang, C. C. and J. Blumentritt, unpublished RCA Laboratories, Princeton, NJ (1970).Google Scholar
  108. Wang, C. C. and F. C. Dougherty, unpublished, RCA Laboratories, Princeton, NJ (1974).Google Scholar
  109. Wang, C. C. and S. H. McFarlane III, J. Crystal Growth 3/4: 485 (1968).Google Scholar
  110. Wang, C. C. and S. H. McFarlane III, J. Crystal Growth 131 14: 262 (1972).Google Scholar
  111. Wang, C. C., G. E. Gottlieb, G. W. Cullen, S. H. McFarlane III, and K. H. Zaininger, Trans. Met. Soc. AIME 245: 441 (1969).Google Scholar
  112. Wang, C. C., F. C. Dougherty, P. J. Zanzucchi, and S. H. McFarlane III, J. Electrochem. Soc. 121 571 (1974A).Google Scholar
  113. Wang, C. C., I. Ladany, S. H. McFarlane III, and F. C. Dougherty, J. Crystal Growth 24/25 239 (1974B).Google Scholar
  114. Watson, H. A., Microwave Semiconductor Devices and Their Circuit Applications, New York: McGraw-Hill (1969).Google Scholar
  115. White, R. M., Proc. IEEE 58: 1238 (1970).CrossRefGoogle Scholar
  116. Wickenden, D. K., K. R. Faulkner, R. W. Brander, and B. J. Isherwood, J. Crystal Growth 9: 158 (1971).ADSCrossRefGoogle Scholar
  117. Williams, B. F. and J. J. Tietjen, Prot.. IEEE 59: 1489 (1971).CrossRefGoogle Scholar
  118. Williams, B. F., J. J. Tietjen, and C. C. Wang, private communication RCA Laboratories, Princeton, NJ (1974).Google Scholar
  119. Yim, W. M. and E. J. Stofko, J. Electrochem. Soc. 119: 381 (1972).CrossRefGoogle Scholar
  120. Yim, W. M. and E. J. Stofko, J. Electrochem. Soc. 121: 965 (1974).CrossRefGoogle Scholar
  121. Yim, W. M., E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 44: 292 (1973).ADSCrossRefGoogle Scholar
  122. Young, L. and H. Sobol, Advances in Microwaves, New York: Academic Press (1974).Google Scholar
  123. Zanzucchi, P. J. and C. C. Wang, personal communication, RCA Laboratories, Princeton, NJ (1974).Google Scholar

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  • C. C. Wang

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