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The Preparation and Properties of Heteroepitaxial Silicon

  • G. W. Cullen

Abstract

The heteroepitaxial growth of silicon on refractory oxide substrates is an intriguing technology to the materials scientist. There is some question as to the degree we now understand (or indeed will in the near future understand) the factors promoting or impeding good crystallinity in heteroepitaxial growth.* There is no question, however, as to the value of realizing thin films of “device quality” silicon on insulating substrates. The question is not, “Is it useful?” Rather, the question is, “How similar to bulk silicon can we make heteroepitaxial silicon in the thickness of interest for device application (i.e., 0.5–1 µm)?”

Keywords

Hole Mobility Hall Mobility Silicon Film Bulk Silicon Heteroepitaxial Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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