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Amazing Light pp 497-505 | Cite as

Infrared Semiconductor Laser by Means of J x H Force Excitation of Electrons and Holes

  • Takeshi Morimoto
  • Meiro Chiba
  • Giyuu Kido

Abstract

In the earlier stage of the investigation of lasing action in solids, especially in semiconductors, the possibility of utilizing Landau levels was proposed by several investigators [1,2]. While these attempts were not successful, the first achievements of a ruby laser was reported by Maiman in 1960 [3]. In semiconductors, after the subsequent developments of injection-type semiconductor lasers [4], the research shifted to the lasing action by use of the quantum size effect in low-dimensional materials, such as quantum wires [5,6] and dots [5]: The principle is based on utilizing the singularity in the density of states of electrons associated with quantization, which produces discrete energy states due to the finite-size effect.

Keywords

Critical Current Density High Magnetic Field Landau Level Lasing Action Quantum Wire 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag New York, Inc. 1996

Authors and Affiliations

  • Takeshi Morimoto
  • Meiro Chiba
  • Giyuu Kido

There are no affiliations available

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