Amazing Light pp 497-505 | Cite as

Infrared Semiconductor Laser by Means of J x H Force Excitation of Electrons and Holes

  • Takeshi Morimoto
  • Meiro Chiba
  • Giyuu Kido


In the earlier stage of the investigation of lasing action in solids, especially in semiconductors, the possibility of utilizing Landau levels was proposed by several investigators [1,2]. While these attempts were not successful, the first achievements of a ruby laser was reported by Maiman in 1960 [3]. In semiconductors, after the subsequent developments of injection-type semiconductor lasers [4], the research shifted to the lasing action by use of the quantum size effect in low-dimensional materials, such as quantum wires [5,6] and dots [5]: The principle is based on utilizing the singularity in the density of states of electrons associated with quantization, which produces discrete energy states due to the finite-size effect.


Critical Current Density High Magnetic Field Landau Level Lasing Action Quantum Wire 
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Copyright information

© Springer-Verlag New York, Inc. 1996

Authors and Affiliations

  • Takeshi Morimoto
  • Meiro Chiba
  • Giyuu Kido

There are no affiliations available

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