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Higher order asymptotic boundary conditions for an oxide region in a semiconductor device

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Part of the book series: Applied and Numerical Harmonic Analysis ((ANHA))

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Abstract

When modeling steady potential flow problems in polygonal non-convex domains, it is expected to find singularities being develop at the corners. The asymptotic behavior of these singularities in reentering corners depends on the boundary data, on the corner angle and on the permittivity constants associated with the potential equation when modeling inhomogeneous media.

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References

  1. Gamba, I.M. Asymptotic behavior at the boundary of a semiconductor device in two space dimensions Based on the thesis dissertation. Istituto di Analisi Numerica del C.N.R. Pub.N.740. Pavia, Italy (1990). Ann. di Mat. Pura App. (IV) CLXIII, 1993, pp 43–91.

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© 1997 Springer Science+Business Media New York

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Gamba, I.M. (1997). Higher order asymptotic boundary conditions for an oxide region in a semiconductor device. In: D’Attellis, C.E., Fernández-Berdaguer, E.M. (eds) Wavelet Theory and Harmonic Analysis in Applied Sciences. Applied and Numerical Harmonic Analysis. Birkhäuser, Boston, MA. https://doi.org/10.1007/978-1-4612-2010-7_12

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  • DOI: https://doi.org/10.1007/978-1-4612-2010-7_12

  • Publisher Name: Birkhäuser, Boston, MA

  • Print ISBN: 978-1-4612-7379-0

  • Online ISBN: 978-1-4612-2010-7

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