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Higher order asymptotic boundary conditions for an oxide region in a semiconductor device

  • Irene M. Gamba
Part of the Applied and Numerical Harmonic Analysis book series (ANHA)

Abstract

When modeling steady potential flow problems in polygonal non-convex domains, it is expected to find singularities being develop at the corners. The asymptotic behavior of these singularities in reentering corners depends on the boundary data, on the corner angle and on the permittivity constants associated with the potential equation when modeling inhomogeneous media.

Keywords

Fourier Coefficient Semiconductor Device Convex Domain Oxide Region Corner Angle 
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References

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Irene M. Gamba

There are no affiliations available

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