Higher order asymptotic boundary conditions for an oxide region in a semiconductor device

  • Irene M. Gamba
Part of the Applied and Numerical Harmonic Analysis book series (ANHA)


When modeling steady potential flow problems in polygonal non-convex domains, it is expected to find singularities being develop at the corners. The asymptotic behavior of these singularities in reentering corners depends on the boundary data, on the corner angle and on the permittivity constants associated with the potential equation when modeling inhomogeneous media.


Fourier Coefficient Semiconductor Device Convex Domain Oxide Region Corner Angle 
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  1. [1]
    Gamba, I.M. Asymptotic behavior at the boundary of a semiconductor device in two space dimensions Based on the thesis dissertation. Istituto di Analisi Numerica del C.N.R. Pub.N.740. Pavia, Italy (1990). Ann. di Mat. Pura App. (IV) CLXIII, 1993, pp 43–91.Google Scholar
  2. [2]
    Gamba, I.M. Behavior of the potential at the pn-Junction for a model in semiconductor theory Appl. Math. Lett. vol. 3, 1990, pp 59–63.MathSciNetMATHCrossRefGoogle Scholar
  3. [3]
    Gamba, I.M. Asymptotic boundary conditions for an oxide region in a semiconductor device, Asymptotic Analysis Journal, vol. 7, 1993, pp 37–48.MathSciNetMATHGoogle Scholar
  4. [4]
    Gilbarg, D. and Trudinger, N. S. Elliptic Partial Differential Equations of Second Order, Springer-Ver lag, New York, 1983.MATHCrossRefGoogle Scholar
  5. [5]
    LadyŹenskaja, O. A. and Uralt’ceva, N. N. Équations aux dérivées partielles du type elliptiqueDunod, Paris, 1968.Google Scholar
  6. [6]
    Markowich, P. The stationary Semiconductor Device Equations, Springer, Vienna, 1986.Google Scholar
  7. [7]
    Markovich, P., Ringhofer, CA., and Schmeiser, C, Semiconductor Equations, Springer, Wien-New York, 1989.Google Scholar
  8. [8]
    Mikhlin, S.G. Mathematical Physics, An Advanced Course, North-Holland, Amsterdam, 1970.Google Scholar
  9. [9]
    Selberherr, S. Analysis and Simulations of Semiconductor Devices, Springer, Vienna, 1984.CrossRefGoogle Scholar

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© Springer Science+Business Media New York 1997

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  • Irene M. Gamba

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