Many electronic devices, such as power amplifiers, oscillators, mixers, switches, etc., operate in the large-signal regime. The term large-signal refers to the magnitude of the RF signal relative to the operating bias. Therefore, die magnitude of the RF signal that produces large-signal effects can vary widely, depending upon the type of device and the bias conditions under which the device operates. For example, semiconductor power diodes may be operated with 100’s or 1000’s of volts applied bias, sustaining 10’s to 100’s of volts of RF or operating signal before large-signal effects become significant; whereas, a submicron quantum well device may be in the large-signal regime with only microvolt or millivolt RF voltage applied.
KeywordsMicrowave Recombination GaAs Gallium Arsenide
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