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MESFET Modelling

  • Chapter
Compound Semiconductor Device Modelling

Abstract

Metal semiconductor field effect transistors (MESFETs) play a central role in microwave technology over the frequency range 1 to 30GHz. They are incorporated in to monolithic microwave integrated circuits as well as being used as discrete elements. They can be used as small-signal and power amplifiers, oscillators, switches, mixers, attenuators and in digital circuits as the fundamental active device. This wide range of applications leads to the requirement for models capable of accurately representing the operation of MESFETs at DC, and microwave frequencies and in both small- and large-signal operation.

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Author information

Authors and Affiliations

  1. University of Leeds, UK

    Christopher M. Snowden

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  1. Christopher M. Snowden
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Editor information

Editors and Affiliations

  1. Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, Sen. Mem. IEEE  & Robert E. Miles BSc, ARCS, PhD, CEng, MIEE, MIEEE  & 

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© 1993 Springer-Verlag London Limited

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Snowden, C.M. (1993). MESFET Modelling. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_2

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  • DOI: https://doi.org/10.1007/978-1-4471-2048-3_2

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-2050-6

  • Online ISBN: 978-1-4471-2048-3

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