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Application of Modelling to Microwave CAD

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Compound Semiconductor Device Modelling
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Abstract

In this chapter we will attempt to link the device models discussed elsewhere to the engineering world of practical microwave circuit CAD. To this end we will look at the problem from the CAD point of view and show where the device models are required. The discussion will mostly deal with the MESFET as this is the device most often used in Monolithic Microwave Integrated Circuits (MMICs) at present but the principles apply to any device.

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References

  • Snowden, CM., ‘Computer-aided design of MMICs based on physical device models’ IEE Proc. Vol. 13, Pt.H, pp. 419–427 1986

    Google Scholar 

  • Besser et al ‘Computer-aided design for the 1980s’, IEEE MTT-S Int. Symposium Digest, 1981, pp.51–53.

    Google Scholar 

  • Sobhy, M.I., Jastrzebski, A.K., Pengelly, R.S., Jenkins, J.A. and Swift, J.B. The design of microwave monolithic voltage controlled oscillators’ Procs. of 15th European Microwave Conf., Paris, 1985, pp. 925–930.

    Google Scholar 

  • Baden Fuller, A.J. ‘Computer optimisation of circuits applied to the modelling of microwave IC passive components’ IEE Proc. Vol. 133, Pt.H., No. 5, October 1986.

    Google Scholar 

  • Jansen, R.H. ‘A novel CAD tool and concept compatible with the requirements of multilayer GaAs MMIC technology’ IEEE MTT-S Symposium Digest, 1985, pp. 711–714.

    Google Scholar 

  • Suckling, C.W. ‘Procedures examined for successful GaAs MMIC design’ MSN and CT March 1986, pp. 79–87.

    Google Scholar 

  • Pucel, R.A. ‘MMICs, Modelling and CAD–where do we go from here?’ 16th European Microwave Conference, p. 61.

    Google Scholar 

  • Jansen, R.H. ‘LINMIC: A CAD package for the layout-oriented design of single and multi-layer MICs/MMICs up to mm-wave frequencies’ Microwave Journal, Feb. 1986, pg. 151.

    Google Scholar 

  • Lamnabi, M. ‘Functional analysis of non-linear circuits: a generating power series approach’ IEE MAP, Vol. 133, Oct. 1986, pg. 375.

    Google Scholar 

  • Rizzoli, V., Cechetti, C, Lipparini, A. and Neri, A. ‘User-oriented software package for the analysis and optimisation of non-linear microwave circuits’ IEE-MAP, Oct. 1986, pg.385.

    Google Scholar 

  • Sobhy, M.I., Jastrzebski, A.K. ‘Computer-aided design of non-linear microwave integrated circuits’ Conference Procs. of 14th European Microwave Conf., pp. 705–710, 1984.

    Google Scholar 

  • Rizzoli, V., Lipparini, A., and Marazzi, E. ‘A general-purpose program for nonlinear microwave circuit design’. IEEE Trans. on Microwave Theory and Techniques, Vol. MTT-31, pp. 762–70, Sept. 1983.

    Article  Google Scholar 

  • Herte, D. and Jansen, R.H. ‘Frequency domain continuation method for the analysis and stability investigation of nonlinear microwave circuits’ IEE Proc. Vol. 133, Pt.H, No. 5, Oct. 1986, 351–362.

    Google Scholar 

  • Brazil, T., et al. ‘Large-signal FET simulation using time domain and harmonic balance methods’, IEE Proc. Vol. 13, Pt.H, No. 5, October 1986, 363–367.

    Google Scholar 

  • Curtice, W.R. ‘A MESFET model for use in design of GaAs integrated circuits’ IEEE Trans. MTT-28, pp. 448–456, 1980.

    Google Scholar 

  • Curtice, W.R. and Ettenberg, M. ‘A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers’ IEEE Trans. MTT-33, pp. 1383–1394, 1985.

    Google Scholar 

  • Statz, H., Newman, P., Smith, I., Pucel, R. and Haus, H. ‘GaAs FET device and circuit simulation in SPICE’ IEEE Trans., ED-34, pp. 160–169, 1987.

    Google Scholar 

  • Materka, A. and Kacprzak, T. ‘Computer calculations of large-signal GaAs FET amplifier characteristics’ IEEE Trans. MTT-33, pp. 129–135, 1985.

    Google Scholar 

  • Hartmann, K. and Strutt, M.J.O. ‘Changes of the four noise parameters due to changes of linear two-port circuits’ IEEE Trans. ED-20, pp. 874–877, 1973.

    Google Scholar 

  • Hillbrand, H. and Russer, P.H. ‘An efficient method for computer aided noise analysis of linear amplifier networks’ IEEE Trans. CAS-23, pp. 235–238, 1976.

    Google Scholar 

  • Rohde, U.L., Pavio, A.M. and Pucel, R.A. ‘Accurate noise simulation of microwave amplifiers using CAD’ Microwave Journal, pp. 130–141, Dec. 1988.

    Google Scholar 

  • Podell, A.F. ‘A functional GaAs FET noise model’ IEEE Trans, on Electron Devices, Vol. ED-28, No. 5, May 1981, pp. 511–517.

    Article  Google Scholar 

  • Cappy, A. ‘Noise modelling and measurement techniques’, IEEE Trans. MTT-36, pp. 1–10, 1988.

    Google Scholar 

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© 1993 University of Leeds

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Brookbanks, D.M. (1993). Application of Modelling to Microwave CAD. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_13

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  • DOI: https://doi.org/10.1007/978-1-4471-2048-3_13

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-2050-6

  • Online ISBN: 978-1-4471-2048-3

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