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Quasi-Two-Dimensional Models for MESFETs and HEMTs

Chapter

Abstract

For the physical modelling of MESFETs and HEMTs, the choice of a modelling technique is strongly guided by the aimed objectives. Roughly speaking, two dimensional (2D) models are mainly devoted to physical analysis while more simple models (analytical or one-dimensional for instance) are rather devoted to electrical engineering, CAD, IC design... The aim of the quasi two dimensional approach (Q2D) is to be a modelling taking into consideration the most important phenomena occuring in the device while staying simple and fast enough to be used in CAD. In addition one objective of Q2D approach is to provide not only the I–V characteristics but also the AC and noise performance as well as the non linear behavior of the device. The main particularities of the Q2D approach can be summerized as follows.

Keywords

Gate Voltage Noise Performance Gate Capacitance Charge Control Relaxation Time Approximation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag London Limited 1993

Authors and Affiliations

  1. 1.Université des Sciences et Technologies de LilleFrance

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