Quasi-Two-Dimensional Models for MESFETs and HEMTs



For the physical modelling of MESFETs and HEMTs, the choice of a modelling technique is strongly guided by the aimed objectives. Roughly speaking, two dimensional (2D) models are mainly devoted to physical analysis while more simple models (analytical or one-dimensional for instance) are rather devoted to electrical engineering, CAD, IC design... The aim of the quasi two dimensional approach (Q2D) is to be a modelling taking into consideration the most important phenomena occuring in the device while staying simple and fast enough to be used in CAD. In addition one objective of Q2D approach is to provide not only the I–V characteristics but also the AC and noise performance as well as the non linear behavior of the device. The main particularities of the Q2D approach can be summerized as follows.


Gate Voltage Noise Performance Gate Capacitance Charge Control Relaxation Time Approximation 
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  1. Adachi S. (1982), Material parameters of In1-xGaxAsyP1-y and related binaries J. Appl. Phys. 53(12):8775–8792.CrossRefGoogle Scholar
  2. Alamkan J. et al (1990) Modelling of Pseudomorphic AlGaAs/InGaAs/GaAs layers using self consistent approach. European Transactions on telecommunications and Related Technologies, Vol. 1(4):59–62.CrossRefGoogle Scholar
  3. Cappy A. et al (1985) Noise modeling in Submicrometer-gate two Dimensional Electron gas Field Effect Transistors. IEEE Trans. Elec. Dev. Vol. ED-32 (12):2787–2796.CrossRefGoogle Scholar
  4. Cappy A., Heinrich W. (1989) High freuqency FET noise performance: A new approach IEEE Trans. Elec. Dev. Vol. 36(2):403–408.CrossRefGoogle Scholar
  5. Carnez B. et al (1980) “Modeling of a submicrometer gate field effect transistor including effects of non stationary electron dynamics”. J. Appl. Phys. vol. 51(1):784–790.CrossRefGoogle Scholar
  6. Delagebeaudeuf D., Linh N.T. (1982) “Metal (n) AlGaAs/GaAs two dimensional electron gas FET” IEEE Trans. Elec. Dev. vol. ED 29(6):955–960.CrossRefGoogle Scholar
  7. Drummond et al (1983) “Bias dependence and light sensitivity of AlGaAs/GaAs MODFET at 77° K” IEEE Trans. Elec. Dev. Vol. ED-30:1806–1811.CrossRefGoogle Scholar
  8. Frensley W.R. (1981) “Power-limiting breakdown effects in GaAs MESFET’s” IEEE Trans. Elec. Dev. Vol. ED-28:962–970.CrossRefGoogle Scholar
  9. Happy H. et al (1993) “HELENA, a friendly software for calculating the DC AC and noise performance of HEMTs” to be published in Int. J. of Microwave and millimeter wave CAE.Google Scholar
  10. Morgan T.N. (1986) “Theory of the DX centers in AlGaAs and GaAs crystals” Phys. Rev. B, Vol. 34:2664–2669.CrossRefGoogle Scholar
  11. Rothe H. and Dahlke W. (1956) “Theory of noisy fourpoles” Proc. IRE, Vol. 44:811–817.CrossRefGoogle Scholar
  12. Schawki T. et al (1988) “2D simulation of degenerate hot electron transport in MODFET including DX-center trapping” Proc. 3rd Int. Conf. Simulation Semiconductor Devices Processes (SISDEP 88).Google Scholar
  13. Shawki et al (1990) “MODFET 2-D Hydrodynamic Energy Modeling Optimization of subquarter-Micron-Gate structure” IEEE Trans. Elec. Dev. Vol. 37(1):21–30.CrossRefGoogle Scholar
  14. Shockey W. (1952) “A Unipolar Field Effect Transistor” Proc. IRE, 40:1365.CrossRefGoogle Scholar
  15. Shur M. Eastman L. (1980) “I–V characteristics of GaAs MESFET with non uniform doping profile” IEEE Trans. Elec. Dev. Vol. ED-27:455–461.CrossRefGoogle Scholar
  16. Shur M. (1976) “Influence of non uniform field distribution on frequency limit of GaAs field effect transistors” Elect. Lett. Vol. 12, n°23:615.CrossRefGoogle Scholar
  17. Snowden CM. and Pantoja R.R. (1989) “Quasi-two-Dimensional MESFET simulations for CAD” IEEE Trans. Elect. Devices, Vol. 36(9):1564–1574.CrossRefGoogle Scholar
  18. Thobel J.L. et al (1990) “the electron transport properties of strained InxGai_xAs”. Appl. Phys. Lett. Vol. 56(4):346–348.CrossRefGoogle Scholar
  19. Vinter B. (1984) “Subbands and charge control in a two-dimensional electron gas field-effect transistor”. Appl. Phys. Lett. 44(3):307–309.CrossRefGoogle Scholar
  20. Wroblewski R. et al (1983): “Theoretical analysis of the DC avalanche breakdown in GaAs MESFET” IEEE Trans. Elect. Devices Vol. ED-30 (2):154–159.CrossRefGoogle Scholar
  21. Yoshida J. (1986) “Classical versus mechanical calculation of the electron Distribution at the n-AlGaAs/GaAs heterointerface” IEEE Trans. Elec. Devices Vol. 33(1):154–156.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag London Limited 1993

Authors and Affiliations

  1. 1.Université des Sciences et Technologies de LilleFrance

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