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Compound Semiconductor Device Modelling pp 232–245Cite as

Quasi-Two-Dimensional Models for MESFETs and HEMTs

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Abstract

For the physical modelling of MESFETs and HEMTs, the choice of a modelling technique is strongly guided by the aimed objectives. Roughly speaking, two dimensional (2D) models are mainly devoted to physical analysis while more simple models (analytical or one-dimensional for instance) are rather devoted to electrical engineering, CAD, IC design... The aim of the quasi two dimensional approach (Q2D) is to be a modelling taking into consideration the most important phenomena occuring in the device while staying simple and fast enough to be used in CAD. In addition one objective of Q2D approach is to provide not only the I–V characteristics but also the AC and noise performance as well as the non linear behavior of the device. The main particularities of the Q2D approach can be summerized as follows.

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Author information

Authors and Affiliations

  1. Université des Sciences et Technologies de Lille, France

    Alain Cappy

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  1. Alain Cappy
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Editor information

Editors and Affiliations

  1. Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, Sen. Mem. IEEE  & Robert E. Miles BSc, ARCS, PhD, CEng, MIEE, MIEEE  & 

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© 1993 Springer-Verlag London Limited

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Cappy, A. (1993). Quasi-Two-Dimensional Models for MESFETs and HEMTs. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_12

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  • DOI: https://doi.org/10.1007/978-1-4471-2048-3_12

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-2050-6

  • Online ISBN: 978-1-4471-2048-3

  • eBook Packages: Springer Book Archive

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