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Physical Models for Compound Semiconductor Devices

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Semiconductor Device Modelling

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Abstract

GaAs technology has a significant advantage over silicon in terms of speed and radiation hardness. However, compound semiconductor technology is much less developed. Device and integrated circuit fabrication is expensive and the fabrication cycle usually takes several weeks. All this makes accurate simulation of device fabrication and realistic device and circuit modeling especially important for compound semiconductor technology, even more so than for its silicon counterpart.

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Author information

Authors and Affiliations

  1. University of Minnesota, USA

    Michael Shur

Authors
  1. Michael Shur
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Editor information

Editors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Leeds, L52 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, MIEEE

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Shur, M. (1989). Physical Models for Compound Semiconductor Devices. In: Snowden, C.M. (eds) Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-1033-0_7

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  • DOI: https://doi.org/10.1007/978-1-4471-1033-0_7

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-1259-4

  • Online ISBN: 978-1-4471-1033-0

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