Abstract
Device Modeling based on the self-consistent solution of fundamental semiconductor equations dates back to the famous work of Gummel in 1964 [31]. Since then numerical device modeling has been applied to nearly all important devices. For some citations regarding the history of modeling the interested reader is refered to [55].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Ahmad N., Arora V.K., Velocity-Field Profile of n-Silicon: A Theoretical Analysis, IEEE Trans.Electron Devices, Vol.ED-33, pp.1075–1077, 1986.
Ali-Omar M., Reggiani L., Drift and Diffusion of Charge Carriers in Silicon and Their Empirical Relation to the Electric Field, Solid-State Electron., Vol.30, pp.693–697, 1987.
Aoki M., Yano K., Masuhara T., Ikeda S., Meguro S., Optimum Crystallographic Orientation of Submicron CMOS Devices Proc.IEDM, pp.577–580, 1985.
Aoki M., Hanamura S., Masuhara T., Yano K., Performance and Hot-Carrier Effects of Small CRYO-CMOS Devices IEEE Trans.Electron Devices, Vol.ED-34, pp.8–18, 1987.
Aoki M., Yano K., Masuhara T., Ikeda S., Meguro S., Optimum Crystallographic Orientation of Submicrometer CMOS Devices Operated at Low Temperatures, IEEE Trans.Electron Devices, Vol.ED-34, pp.52–57, 1987.
Arora N.D., Hauser J.R., Roulston D.J., Electron and Hole Mobilities in Silicon as a Function of Concentration and Temperature, IEEE Trans.Electron Devices, Vol.ED-29, pp.292–295, 1982.
Arora N.D., Gildenblat G.S., A Semi-Emperical Model of the MOSFET Inversion Layer Mobility for Low-Temperature Operation, IEEE Trans.Electron Devices, Vo1.ED-34, pp.89–93, 1987.
Baccarani G., Wordeman M.R., Transconductance Degradation in Thin-Oxide MOSFET’s, Proc.IEDM, pp.278–281, 1982.
Baccarani G., Physics of Submicron Devices, Proc.VLSI Process and Device Modeling, pp.l–23, Katholieke Universiteit Leuven, 1983.
Baccarani G., Wordeman M.R., Transconductance Degradation in Thin-Oxide MOSFET’s, IEEE Trans.Electron Devices, Vol.ED-30, pp.1295–1304, 1983.
Baccarani G., Wordeman M.R., An Investigation of Steady-State Velocity Overshoot in Silicon, Solid-State Electron., Vol.28, pp.407–416, 1985.
Blakemore J.S., Approximations for Fermi-Dirac Integrals, especially the Function F1/2(x) used to Describe Electron Density in a Semiconductor, Solid-State Electron., Vol.25, pp.1067–1076, 1982.
Blotekjaer K., Transport Equations for Electrons in Two-Valley Semiconductors IEEE Trans.Electron Devices, Vol.ED-17, pp.38–47, 1970.
Canali C., Ottaviani G., Saturation Values of the Electron Drift Velocity in Silicon between 300K and 4.2K Physics Lett., Vol.32A, pp.147–148, 1970.
Canali C., Majni G., Minder R., Ottaviani G., Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature IEEE Trans.Electron Devices, Vol.ED-22, pp.1045–1047, 1975.
Caughey D.M., Thomas R.E., Carrier Mobilities in Silicon Empirically Related to Doping and Field Proc.IEEE, Vol.52, pp.2192–2193, 1967.
Cheng D.Y., Hwang C.G., Dutton R.W., PISCES-MC: A Multiwindow, Multimethod 2-D Device Simulator IEEE Trans.CAD of Integrated Circuits and Systems, Vol.CAD-7, pp.1017–1026, 1988.
Chrzanowska-Jeske M., Jaeger R.C., Modeling of Temperature Dependent Transport Parameters for Low Temperature Bipolar Transistor Simulation, Proc.Symposium on Low Temperature Electronics and High Temperature Superconductors, The Electrochemical Society, Vol.88–9, pp.30–38, 1988.
Cody W.J., Tiiacher H.C., Rational Chebyshev Approximations for Fermi-Dirac Integrals of Orders -1/2, 1/2 and 3/2 Math.Comp., Vol.21, pp.30–40, 1967.
Crowell C.R., Sze S.M., Temperature Dependence of Avalanche Multiplication in Semiconductors Appl.Phys.Lett., Vol.9, pp.242–244, 1966.
Debye P.P., Conwell E.M., Electrical Properties of N-Type Germanium Physical Review, Vol.93, pp.693–706, 1954.
Decker D.R., Dunn C.N., Temperature Dependence of Carrier Ionization Rates and Saturated Velocities in Silicon J.Electronic Mat., Vol.4, pp.527–547, 1975.
Dorkel J.M., Leturcq Ph., Carrier Mobilities in Silicon Semi-Empirically Related to Temperature, Doping and Injection Level Solid-State Electron., Vol.24, pp.821–825, 1981.
Dziewior J., Schmid W., Auger Coefficients for Highly Doped and Highly Excited Silicon Appl.Phys.Lett., Vol.31, pp.346–348, 1977.
Faricelli J., Private Communication 1987.
Frey J. Transport Physics for VLSI in: Introduction to the Numerical Analysis of Semiconductor Devices and Integrated Circuits, pp.51–57, Boole Press, Dublin 1981.
Gaensslen F.H., Jaeger R.C., Walker J.J., Low-Temperature Threshold Behavior of Depletion Mode Devices Proc.IEDM, pp.520–524, 1976.
Gaensslen F.H., Hideout V.L., Walker E.J., Walker J.J., Very Small MOSFET’s for Low Temperature Operation IEEE Trans.Electron Devices, Vol.ED-24, pp.218–229, 1977.
Gaensslen F.H., Jaeger R.C., Temperature Dependent Threshold Behaviour of Depletion Mode MOSFET’s Solid-State Electron., Vol.22, pp.423–430, 1979.
Gaensslen F.H., Jaeger R.C., Behavior of Electrically Small Depletion Mode MOSFET’s at Low Temperature Solid-State Electron., Vol.24, pp.215–220, 1981.
Gummel H K, A Self-Consistent Iterative Scheme for One-Dimensional Steady State Transistor Calculations IEEE Trans.Electron Devices, Vol.ED-11, pp.455–465, 1964.
Hänsch W., Selberherr S., MINIMOS 3: A MOSFET Simulator that Includes Energy Balance IEEE Trans.Electron Devices, Vol.ED-34, pp.1074–1078, 1987.
Henning A.K., Chan N., Plummer J D, Substrate Current in n-Channel and p-Channel MOSFET’s between 77K and 300K: Characterization and Simulation Proc.IEDM, pp.573–576, 1985.
Henning A.K., Chan N.N., Watt J.T., Plummer J.D., Substrate Current at Cryogenic Temperatures: Measurements and a Two-Dimensional Model for CMOS Technology IEEE Trans.Electron Devices, Vol.ED-34, pp.64–74, 1987.
Hess K., Iafrate G.J., Theory and Applications of Near Ballistic Transport in Semiconductors Proc.IEEE, Vol.76, pp.519–532, 1988.
Heywang W., Pötzl H., Bandstruktur and Stromtransport Springer, Berlin, 1976.
Hiroki A., Odanaka S., Ohe K., Esaki H., A Mobility Model for Submicrometer MOSFET Device Simulations IEEE Electron Device Lett., Vol.EDL-8, pp.231–233, 1987.
Hiroki A., Odanaka S., Ohe K., Esaki H., A Mobility Model for Submicrometer MOSFET Simulations Including HotCarrier-Induced Device Degradation IEEE Trans.Electron Devices, Vol.ED-35, pp.1487–1493, 1988.
Jaeger R.C., Private Communication October 1987.
Jaeger R.C., Gaensslen F.H., Low Temperature MOS Microelectronics Proc.Symposium on Low Temperature Electronics and High Temperature Superconductors, The Electrochemical Society, Vol.88–9, pp.43–54, 1988.
Jaggi R., Weibel H., High-Field Electron Drift Velocities and Current Densities in Silicon Helv.Phys.Acta, Vol.42, pp.631–632, 1969.
Jaggi R., High-Field Drift Velocities in Silicon and Germanium Helv.Phys.Acta, Vol.42, pp.941–943, 1969.
Kamgar A., Miniaturization of Si MOSFET’s at 77K, IEEE Trans.Electron Devices, Vol.ED-29, pp.1226–1228, 1982.
Kinugawa M., Kakumu M., Usami T., Matsunaga J., Effects of Silicon Surface Orientation on Submicron CMOS Devices Proc.IEDM, pp.581–584, 1985.
Lau D., Gildenblat G., Sodini G.G., Nelson D.E., Low-Temperature Substrate Current Characterization of n-Channel MOSFET’s, Proc.IEDM, pp.565–568, 1985.
Li S.S., Thurber W.R., The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in n-Type Silicon, Solid-State Electron., Vol.20, pp.609–616, 1977.
Nishida T., Sah C.T., A Physically Based Mobility Model for MOSFET Numerical Simulation, IEEE Trans.Electron Devices, Vol.ED-34, pp.310–320, 1987.
Okuto Y., Crowell C.R., Threshold Energy Effect on Avalanche Breakdown Voltage in Semiconductor Junctions, Solid-State Electron., Vol.18, pp.161–168, 1975.
Robertson P.J., Dumin D J, Ballistic Transport and Properties of Submicrometer Silicon MOSFET’s from 300 to 4.2K, IEEE Trans.Electron Devices, Vol.ED-33, pp.494–498, 1986.
Sai-Halasz G.A., Processing and Characterization of Ultra Small Silicon Devices, Proc.ESSDERC Conf., pp.71–80, 1987.
Schlitz A., Selberherr S., Pötzl H., Analysis of Breakdown Phenomena in MOSFET’s, IEEE Trans.CAD of Integrated Circuits and Systems, Vol.CAD-1, pp.77–85, 1982.
Seavey M., Private Communication, 1987.
Seeger K., Semiconductor Physics, Springer, Wien, 1973.
Selberherr S., Schlitz A., Pötzl H., MINIMOS - A Two-Dimensional MOS Transistor Analyzer IEEE Trans.Electron Devices, Vol.ED-27, pp.1540–1550, 1980.
Selberherr S., Analysis and Simulation of Semiconductor Devices Springer, Wien New-York, 1984.
Selberherr S., Griebel W., Pötzl H., Transport Physics for Modeling Semiconductor Devices in: Simulation of Semiconductor Devices and Processes, pp.133–152, Pineridge Press, Swansea, 1984.
Selberherr S., Low Temperature Mos Device Modeling, Proc.Symposium on Low Temperature Electronics and High Temperature Superconductors, The Electrochemical Society, Vol.88–9, pp.43–86, 1988.
Shahidi G.G., Antoniadis D.A., Smith H.I., Electron Velocity Overshoot at 300K and 77K in Silicon MOSFET’s with Sub-micron Channel Length Proc.IEDM, pp.824–825, 1986.
Solomon P.M., Options for High Speed Logic at 77K, Proc.Symposium on Low Temperature Electronics and High Temperature Superconductors, The Electrochemical Society, Vol.88–9, pp.3–17, 1988.
Sugano T., Low Temperature Electronics Research in Japan, Proc.Symposium on Low Temperature Electronics and High Temperature Superconductors, The Electrochemical Society, Vol.88–9, pp.18–29, 1988.
Sun Y-C.J., Taur Y., Dennard R.H., Klepner S.P., Submicrometer-Channel CMOS for Low-Temperature Operation IEEE Trans.Electron Devices, Vol.ED-34, pp.19–27, 1987.
Sutherland A.D., An Improved Empirical Fit to Baraff’s Universal Curves for the Ionization Coefficients of Electron and Hole Multiplication in Semiconductors IEEE Trans.Electron Devices, VOl.ED-27, pp.1299–1300, 1980.
Sze S.M., Physics of Semiconductor Devices Wiley, New York, 1969.
Watt J.T., Fishbein B.J., Plummer J D, A Low-Temperature NMOS Technology with Cesium-Implanted Load Devices IEEE Trans.Electron Devices, Vol.ED-34, pp.28–38, 1987.
Woo J.C.S., Plummer J. D., Short Channel Effects in MOSFET’s at Liquid-Nitrogen Temperature, IEEE Trans.Electron Devices, Vol.ED-33, pp.1012–1019, 1986.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Selberherr, S. (1989). Physical Models for Silicon VLSI. In: Snowden, C.M. (eds) Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-1033-0_6
Download citation
DOI: https://doi.org/10.1007/978-1-4471-1033-0_6
Publisher Name: Springer, London
Print ISBN: 978-1-4471-1259-4
Online ISBN: 978-1-4471-1033-0
eBook Packages: Springer Book Archive