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Review of Semiconductor Device Physics

  • Robert E. Miles

Abstract

As a basis for the work to be covered in subsequent lectures an outline of the physics of a number of common semiconductor devices will be presented. The purpose here is not only to familiarise the reader with the modes of operation but also to point out the limitations of the simple theories. Nevertheless, even with these limitations, the analytical models outlined in this chapter have played a vital role in the development of semiconductor devices. As the performance demanded from these devices becomes ever more exacting, current densities and electric fields approach their limits and many of the approximations necessary for an analytical description no longer apply. In these situations we must resort to a physical model based on semiconductor physics in order to understand the processes taking place. These models can account for the full non-linear behaviour of a device but they do require a large amount of computing power for a successful simulation. After a number of years of development in this area, device simulation is now giving meaningful results by including realistic models of both surface and bulk phenomena such as surface states, trapping levels and hot electron effects.

Keywords

Drift Velocity Reverse Bias Minority Carrier Schottky Diode Forward Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • Robert E. Miles
    • 1
  1. 1.University of LeedsUK

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