Combined Approaches for Nanoelectronic Device Fabrication
Lithography plays a key roll in modern IC manufacturing industry. The increased performance of modern IC devices is strongly linked to an increase of lithographic resolution. For lithographic mask production and patterning of features down to a few performance, electron beam lithography (EBL) is a well established technique. Transferring the mask pattern into resist on an industrial high throughput level is mainly the domain of optical lithography. Using resolution enhancement techniques (RET), it possible to achieve dimensions of the order of 100 nm. According to the International Technology Roadmap for Semiconductors (ITRS) sub 100 nm patterning is a great demand for next generation lithography (NGL). Advanced technologies, such as extreme ultraviolet lithography (EUV), X-ray lithography (XRL), electron projection lithography (EPL), and ion projection lithography (IPL) are pushing towards into the domain of 35 nm.1
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