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Electrical Characterization

  • Pushkar Jain
  • Eugene J. Rymaszewski
Chapter

Abstract

The control of electrical power-distribution (supply) noise continues to be a challenge as the performance of packaged electronics is increasing. To contain power-distribution noise within acceptable limits, the decoupling capacitors are placed as close to the switching circuits as possible, which may or may not be good enough. This chapter discusses the electrical properties and the performance characterization of the thin-film decoupling capacitors, which use dielectrics compatible with the semiconductor processing. The performance advantages offered by the embedded thin-film decoupling capacitors over discrete capacitors are quantified, with experimental emphasis on Ta2O5 dielectrics. The performance of Ta2O5 decoupling capacitors is also compared with that of the SiO2 and Si3N4 capacitors over a range of operating frequencies from dc to 20 GHz.

Keywords

Dielectric Constant Insertion Loss Leakage Current Density Test Vehicle Electrical Characterization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    R. K. Poon, “Computer Circuits Electrical Design,” Prentice Hall, Eaglewood Cliffs, 1995, ch. 8, pp 195–229.Google Scholar
  2. [2]
    W. D. Brown, “Advanced Electronic Packaging with Emphasis on Multichip Modules,” IEEE Press Series on Microelectronic Systems, 1998, ch. 3, pp. 133–136.Google Scholar
  3. [3]
    H. B. Bakoglu, “Circuits, Interconnections, and Packaging for VLSI,” Addison-Wesley VLSI Systems Series, ch 7, pp. 281–335.Google Scholar
  4. [4]
    B. K. Gilbert and G.-W. Pan, IEEE Trans. Microwave Theory Tech. 45, 1819 (1997).CrossRefGoogle Scholar
  5. [5]
    R. R. Tummala, E. J. Rymaszewski, and A. Klopfenstein (Eds), “Microelectronics Packaging Handbook,” 2nd ed., vol 2, New York: Chapman and Hall, 1997, ch 3, pp. 232–270CrossRefGoogle Scholar
  6. [6]
    R. R. Tummala, “Fundamentals of Microsystems Packaging,” McGraw-Hill, 2001, ch 4, pp. 120–182.Google Scholar
  7. [7]
    M. P. Goetz, IEEE Trans. Comp., Packag., Manufact. Technol. B19, 518 (1996).CrossRefGoogle Scholar
  8. [8]
    M. Nielsen, Ph.D. thesis, Rensselaer Polytech. Inst., Troy, NY, 1998.Google Scholar
  9. [9]
    J.-Y. Kim, Ph.D. thesis, Rensselaer Polytech. Inst., Troy, NY, 2000.Google Scholar
  10. [10]
    P. Jain, Ph.D. thesis, Rensselaer Polytech. lnst., Troy, NY, 2003.Google Scholar
  11. [11]
    4140B, Current-Voltage meter, Yokogawa-Hewlett Packard, Ltd.Google Scholar
  12. [12]
    4192A, LF Impedance Analyzer, 5Hz-13MHz, Yokogawa-Hewlett Packard, Ltd.Google Scholar
  13. [13]
    HP 8510 Vector Network analyzer, Yokogawa-Hewlett Packard, Ltd.Google Scholar
  14. [14]
    “S-Parameter Techniques for Faster More Accurate Network Design,” Hewlett-Packard Test & Measurement Application Note 95-1.Google Scholar
  15. [15]
    W. Kim and M. Swaminathan, in the Proc. of 2000 Electronics Packaging Technology Conference, pp. 191–197.Google Scholar
  16. [16]
    Cascade Microtech’s Air Coplanar™ Probes (ACP), GSG tip-125μm pitch.Google Scholar
  17. [17]
    L. I. Maissel, and R. Giang, “Handbook of Thin Film Technology,” 1st ed. (reissue), McGRAW-HILL book Co., 1983, ch. 16, pp. 21–33.Google Scholar
  18. [18]
    Peter A. Rizzi, Microwave Engineering, (Prentice-Hall 1988), ch. 1-3, pp 1–102.Google Scholar
  19. [19]
    W. D. Callister, Jr., “Materials Science and Engineering— an Introduction,” 3rd Edition, John Willy & Son, Inc. 1994, ch. 19, pp. 628–632.Google Scholar
  20. [20]
    D. D. Pollock, “Physical Properties of Materials for Engineers,” 2nd Edition, CRC Press, 1993, ch. 12, pp. 554–571.Google Scholar
  21. [21]
    W. D. Callister, Jr., “Materials Science and Engineering — an Introduction,” 3rd Edition, John Willy & Son, Inc. 1994, ch. 19, pp. 628–632.Google Scholar
  22. [22]
    S. Walker, “Capacitance, inductance and crosstalk analysis,” 1990, Ch. 2, pp 85–121.Google Scholar
  23. [23]
    M. E. Goldfarb and R. A. Pucel, “Modeling via hole grounds in microstrip,” IEEE microwave and guided wave letts., vol. 1, no. 6, 1991.Google Scholar
  24. [24]
    J. H. Wu and J. A. del Alamo, “A high aspect-ratio silicon substrate-via technology and applications,” MARCO Review, March 22, 2002.Google Scholar
  25. [25]
    J. N. Humenik, J. M. Oberschmidt, L. L. Wu, and S. G. Paull, IBM Journal of Research and Development. 36(5), 935 (1992).CrossRefGoogle Scholar
  26. [26]
    D. R. Lamb and D. Robert, “Electrical conduction mechanisms in thin insulating films,” (Methuen, London 1967), Chap. 1-6.Google Scholar
  27. [27]
    P. Jain and E. J. Rymaszewski, IEEE Trans. Adv. Packag., 25, 454 (2002).CrossRefGoogle Scholar
  28. [28]
    P. Jain, J. Y. Kim, Y. Xiao, R. Natarajan, E. J. Rymaszewski, R. J. Gutmann, and T. P. Chow, Proc. CPES annual review 2000, Blacksburg, YA, pp. 155–158, 2000.Google Scholar
  29. [29]
    J.-Q. Lu, Y. Kwon, A. Jindal, K.-W. Lee, J. McMahon, G. Rajagopalan, A.Y. Zeng, R. P. Kraft, B. Altemus, B. Xu, E. Eisenbraun, J. Castracane, J. F. McDonald, T. S. Cale, A. Kaloyeros, and R.J. Gutmann, (invited paper), at 19th International VLSI Multilevel Interconnection (VMIC) Conference, pp. 445–454, Singapore, November 18–20, 2002.Google Scholar

Copyright information

© Springer Science+Business Media New York 2004

Authors and Affiliations

  • Pushkar Jain
    • 1
  • Eugene J. Rymaszewski
    • 1
  1. 1.Rensselaer Polytechnic InstituteTroyUSA

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