Skip to main content
SpringerLink
Log in
Book cover

Silicon-on-Insulator Technology: Materials to VLSI pp 327–360Cite as

SOI Circuits

  • Chapter

  • 876 Accesses

Abstract

SOI MOSFETs present the following advantages over bulk devices:

  • absence of latchup in CMOS structures (see chapter 1)

  • higher SEU and soft-error immunity (see chapter 7)

  • reduced parasitic capacitances (see chapter 5)

  • simplified CMOS processing (see chapter 4)

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD   169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Refrences

  1. S.B. Park, Y.W. Kim, Y.G. Ko, K.I. Kim, I.K. Kim, H.S. Kang, J.O. Yu, K.P. Suh, IEEE Journal of Solid-State Circuits, Vol. 34, p. 1436, 1999

    Article  Google Scholar 

  2. M. Canada, C. Akroul, D. Cawlthron, J. Corr, S. Geissler, R. Houle, P. Kartschoke, D. Kramer, P. McCormick, N. Rohrer, G. Salem, L. Warriner, IEEE International Solid-State Circuits Conference, Digest of Technical Papers, p. 430, 1999

    Google Scholar 

  3. A.G. Aipperspach, D.H. Allen, D.T. Cox, N.V. Phan, S.N. Storino, IEEE Journal of Solid-State Circuits, Vol. 34, p. 1430, 1999

    Article  Google Scholar 

  4. S. Geissler, D. Appenzeller, E. Cohen, S. Charlebois, P. Kartschoke, P. McCormick, N. Rohrer, G. Salem, P. Sandon, B. Singer, T. Von Reyn, J. Zimmerman, IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Part Vol. 1, p. 148, 2002

    Google Scholar 

  5. C.N. Keltcher, K.J. McGrath, A. Ahmed, P. Conway, IEEE Micro, Vol. 23, no. 2, p. 66, 2003

    Article  Google Scholar 

  6. K. Shimomura, H. Shimano, N. Sakashita, F. Okuda, T. Oashi, Y. Yamaguchi, T. Eimori, M. Inuishi, K. Arimoto, S. Maegawa, Y. Inoue, S. Komori, K. Kyuma, IEEE Journal of Solid-State Circuits, Vol. 32, p. 1712, 1997

    Article  Google Scholar 

  7. T. Oashi, T. Eimori, F. Morishita, T. Iwamatsu, Y. Yamaguchi, F. Okuda, K. Shimomura, H. Shimano, S. Sakashita, K. Arimoto, Y. Inoue, S. Komori, M. Inuishi, T. Nishimura, H. Miyoshi, Technical Digest of the International Electron Devices Meeting, p. 609, 1996

    Google Scholar 

  8. T. Eimori, T. Oashi, F. Morishita, T. Iwamatsu, Y. Yamaguchi, F. Okuda, K. Shimomura, H. Shimano, N. Sakashita, K. Arimoto, Y. Inoue, S. Komori, M. Inuishi, T. Nishimura, H. Miyoshi, IEEE Transactions on Electron Devices, Vol. 45, p. 1000, 1998

    Article  Google Scholar 

  9. J.W. Park, Y.G. Kim, I.K. Kim, K.C. Park, K.C. Lee, T.S Jung TS, IEEE Journal of Solid-State Circuits, Vol. 34, p. 1446, 1999

    Article  Google Scholar 

  10. Y.H. Koh, M.R. Oh, J.W. Lee, J.W. Yang, W.C. Lee, C.K. Park, J.B. Park, Y.C. Heo, K.M. Rho, B.C. Lee, M.J. Chung, M. Huh, H.S. Kim, K.S. Choi, W.C. Lee, J.K. Lee, K.H. Ahn, K.W. Park, J.Y. Yang, H.K. Kim, D.H. Lee, I.S. Hwang, Technical Digest of International Electron Devices Meeting, p. 579, 1997

    Google Scholar 

  11. Y.W. Kim, S.B. Park, Y.G. Ko, K.I. Kim, I.K. Kim, K.J. Bae, K.W. Lee, J.O. Y, U. Chung, K.P. Suh, Digest of Technical Papers of the IEEE International Solid-State Circuits Conference, p. 432, 1999

    Google Scholar 

  12. T. Yamauchi, F. Morisita, S. Maeda, K. Arimoto, K. Fujishima, H. Ozaki, T. Oshihara, IEEE Journal of Solid-State Circuits, Vol. 35, no. 8, p. 1169, 2000

    Article  Google Scholar 

  13. F. Ichikawa, Y. Nagatomo, Y. Katakura, S. Itoh, H. Matsuhashi, N. Hirashita, S. Baba, Electrochemical Society Proceedings, Vol. 2003-05, p. 123, 2003

    Google Scholar 

  14. M. Itoh, Y. Kawai, S. Ito, K. Yokomizo, Y. Katakura, Y. Fukuda, F. Ichikawa, Electrochemical Society Proceedings, Vol. 2001-3, p. 331, 2003

    Google Scholar 

  15. B.Y. Hwang, M. Racanelli, M. Huang, J. Foerstner, S. Wilson, T. Wetteroth, S. Wald, J. Rugg, S. Cheng, Extended Abstracts of the International Conference on Solid-State Devices and Materials, Yokohama, p. 268, 1994

    Google Scholar 

  16. G.G. Shahidi, T.H. Ning, R. Dennard, B. Davari, Extended Abstracts of the International Conference on Solid-State Devices and Materials, Yokohama, p. 265, 1994

    Google Scholar 

  17. M. Guerra, A. Wittkower, J. Stahman, J. Schrankler, Semiconductor international, May 1990

    Google Scholar 

  18. M. Itoh, Y. Kawai, S. Ito, K. Yokomizo, Y. Katakura, Y. Fukuda, F. Ichikawa, Electrochemical Society Proceedings, Vol. 2001-3, p. 331, 2001

    Google Scholar 

  19. Y. Fukuda, S. Ito, M. Ito, OKI Technical Review, Vol. 4, p. 54, 2001

    Google Scholar 

  20. M.M. Pelella, W. Maszara, S. Sundararajan, S. Sinha, A. Wei, D. Ju, W. En, S. Krishnan, D. Chan, S. Chan, P. Yeh, M. Lee, D. Wu, M. Fuselier, R. van Bentum, G. Burbach, C. Lee, G. Hill, D. Greenlaw, C. Riccobene, O. Karlsson, D. Wristers, N. Kepler, Proceedings of the IEEE International SOI Conference, p. 1, 2001

    Google Scholar 

  21. M.M. Pelella, J.G. Fossum, IEEE Transactions on Electron Devices, Vol. 49, no. 1, p. 96, 2002

    Article  Google Scholar 

  22. G.G. Shahidi, IBM Journal of Research & Development, Vol. 46, no. 2-3, p. 121, 2002

    Article  Google Scholar 

  23. M.A. Pelella, J.G. Fossum, IEEE Transactions on Electron Devices, Vol. 49, no. 1, pp. 96, 2001

    Article  Google Scholar 

  24. D. Flandre, D. Vanhoenacker, International Semiconductor Conference (CAS′98) Proceedings, p. 115, 1998

    Google Scholar 

  25. A.O. Adan, T. Naka, S. Kaneko, D. Urabe, K. Higashi, A. Kagisawa, IEEE International SOI Conference Proceedings, p. 116, 1996

    Google Scholar 

  26. T. Douseki, J. Yamada, H. Kyuragi, Symposium on VLSI Circuits Digest of Technical Papers, p. 6, 2002

    Google Scholar 

  27. D. Flandre, J.P. Colinge, J. Chen, D. De Ceuster, J.P. Eggermont, L. Ferreira, B. Gentinne, P.G.A. Jespers, A. Viviani, R. Gillon, J.P. Raskin, A. Vander Vorst, D. Vanhoenacker-Janvier, F. Silveira, Analog Integrated Circuits & Signal Processing, Vol. 21, no. 3, p. 213, 1999

    Article  Google Scholar 

  28. T. Douseki, S. Shigematsu, Y. Tanabe, M. Harada, H. Inokawa, T. Tsuchiya, Digest of Technical Papers of the IEEE International Solid-State Circuits Conference, p. 84, 1996

    Google Scholar 

  29. M. Ino, H. Sawada, K. Nishimura, M. Urano, H. Suto, S. Date, T. Ishiara, T. Takeda, Y. Kado, H. Inokawa, T. Tsuchiya, Y. Sakakibara, Y. Arita, K. Izumi, K. Takeya, T. Sakai Digest of Technical Papers, IEEE International Solid-State Circuits Conference, p. 86, 1996

    Google Scholar 

  30. T. Fuse, Y. Oowaki, M. Terauchi, S. Watanabe, M. Yoshimi, K. Ohuchi, J. Matsunaga, Digest of Technical Papers, IEEE International Solid-State Circuits Conference, p. 88, 1996

    Google Scholar 

  31. A.O. Adan, T. Naka, S. Kaneko, D. Urabe, K. Higashi, A. Kasigawa, Proceedings of the IEEE International SOI Conference, p. 116, 1996

    Google Scholar 

  32. T. Fuse, Y. Oowaki, Y. Yamada, M. Kamoshida, M. Ohta, T. Shino, S. Kawanaka, M. Terauchi, T. Yoshida, G. Matsubara, S. Oshioka, S. Watanabe, M. Yoshimi, K. Ohuchi, S. Manabe, Digest of Technical papers of the International Solid-State Circuits Conference, p. 286, 1997

    Google Scholar 

  33. Y. Ohtomo, S. Yasuda, M. Nogawa, J. Inoue, K. Yamakoshi, H. Sawada, M. Ino, S. Hino, Y. Sato, Y. Takei, T. Watanabe, K. Takeya, Digest of Technical papers of the International Solid-State Circuits Conference, p. 154, 1997

    Google Scholar 

  34. T. Douseki, H. Kyuragi, Proceedings of the IEEE International SOI Conference, p. 5, 2003

    Google Scholar 

  35. H. Shang, M.H. White, D.A. Adams, Proceedings of the IEEE International SOI Conference, p. 37, 2002

    Google Scholar 

  36. M. Terauchi, Proceedings of the IEEE International SOI Conference, p. 108, 2000

    Google Scholar 

  37. P. Villard, J. Jomaah, B. Gomez, J. de Pontcharra, D. Save, S. Chouteau, E. Mackowiak, Electrochemical Society Proceedings, Vol. 2003-05, p. 243, 2003

    Google Scholar 

  38. M. Itoh, Y. Kawai, S. Ito, K. Yokomizo, Y. Katakura, Y. Fukuda, F. Ishikawa, Electrochemical Society Proceedings, Vol. 2001-3, p. 331, 2001

    Google Scholar 

  39. Y. Kado, Y. Matsuya, T. Douseki, S. Nakata, M. Harada, J. Yamada, Electrochemical Society Proceedings, Vol. 2001-3, p. 277, 200

    Google Scholar 

  40. D. Levacq, V. Dessard, D. Flandre, Electrochemical Society Proceedings, Vol. 2003-05, p. 249, 2003

    Google Scholar 

  41. D. Levacq, C. Liber, V. Dessard, D. Flandre, Proceedings of the IEEE International SOI Conference, p. 19, 2003

    Google Scholar 

  42. S. Natarajan, A. Marshall, IEEE International Conference on Electronics, Circuits and Systems, Part Vol. 2, p. 835, 2002

    Google Scholar 

  43. T. Eimori, T. Oashi, F. Morishita, T. Iwamatsu, Y. Yamaguchi, F. Okuda, K. Shimomura, H. Shimano, N. Sakashita, K. Arimoto, Y. inoue, S. Komori, M. Inuishi, T. Nishimura, H. Miyoshi, IEEE transactions on Electron Devices, Vol. 45, no. 5, p. 1000, 1998

    Article  Google Scholar 

  44. T. Ikeda, S. Wakahara, Y. Tamaki, H. Higuchi, Proceedings of the IEEE International SOI Conference, p. 159, 1998

    Google Scholar 

  45. Y. Wada, K. Nii, H. Kuriyama, S. Maeda, K. Ueda, Y. Matsuda, Proceedings of the IEEE International SOI Conference, p. 127, 1998

    Google Scholar 

  46. Y. Hu, C. Teng, T.W. Houston, K. Joyner, T.J. Aton, Digest of Technical papers, Symposium on VLSI Technology, p. 128, 1996

    Google Scholar 

  47. K. Izumi, Y. Omura, M. Ishikawa, E. Sano, Technical Digest of the Symposium on VLSI Technology, p. 10, 1982

    Google Scholar 

  48. W.A. Krull, J.C. Lee, Proc. IEEE SOS/SOI Technology Workshop, p. 69, 1988

    Google Scholar 

  49. T. W. Houston, H. Lu, P. Mei, T.G.W. Blake, L.R. Hite, R. Sundaresan, M. Matloubian, W.E. Bailey, J. Liu, A. Peterson, G. Pollack, Proc. IEEE SOS/SOI Technology Workshop, p. 137, 1989

    Google Scholar 

  50. A.J. Auberton-Hervé, B. Giffard, M. Bruel, Proceedings of the IEEE SOS/SOI Technology Workshop, p. 169, 1989

    Google Scholar 

  51. W.E. Bayley, H. Lu, T.G.W. Blake, L.R. Hite, P. Mei, D. Hurta, T.W. Houston, G.P. Pollack, Proceedings of the IEEE International SOI Conference, p. 134, 1991

    Google Scholar 

  52. L.K. Wang, J. Seliskar, T. Bucelot, A. Edenfeld, N. Haddad, Technical Digest of the International Electron Device Meeting, p. 679, 1991

    Google Scholar 

  53. H. Lu, E. Yee, L. Hite, T. Houston, Y.D. Sheu, R. Rajgopal, C.C. CHen, J.M. Hwang, G. Pollack, Proceedings of IEEE International SOI Conference, p. 182, 1993

    Google Scholar 

  54. G.G. Shahidi, T.H. Ning, T.I. Chappell, J.H. Comfort, B.A. Chappell, R. Franch, C.J. Anderson, P.W. Cook, S.E. Schuster, M.G. Rosenfield, M.R. Polcari, R.H. Dennard, and B. Davari, Technical Digest of the International Electron Device Meeting, p. 813, 1993

    Google Scholar 

  55. T. Eimori, T. Oashi, H. Kimura, Y. Yamaguchi, T. Iwamatsu, T. Tsuruda, K. Suma, H. Hidaka, Y. Inoue, T. Nishimura, S. Satoh, and M. Miyoshi, Technical Digest of the International Electron Device Meeting, p. 45, 1993

    Google Scholar 

  56. F.T. Brady, T. Scott, R. Brown, J. Damato, N.F. Haddad, IEEE Transactions on Nuclear Science, Vol. 41, no. 6, p. 2304, 1994

    Article  Google Scholar 

  57. H.-S. Kim, S.-B. Lee, D.-U. Choi, J.-H. Shim, K.-C. Lee, K.-P. Lee, K.-N. Kim, and J.-W. Park, Digest of Technical Papers of the Symposium on VLSI Technology, p. 143, 1995

    Google Scholar 

  58. T. Oashi, T. Eimori, F. Morishita, T. Iwamatsu, Y. Yamaguchi, F. Okuda, K. Shimomura, H. Shimano, S. Sakashita, K. Arimoto, Y. Inoue, S. Komori, M. Inuishi, T. Nishimura, and H. Miyoshi, Technical Digest of the International Electron Device Meeting, p. 609, 1996

    Google Scholar 

  59. K. Shimomura, H. Shimano, N. Sakashita, F. Okuda, T. Oashi, Y. Yamaguchi, T. Eimori, M. Inuishi, K. Arimoto, S. Maegawa, Y. Inoue, S. Komori, K. Kyuma, IEEE Journal of Solid-State Circuits, Vol. 32, no. 11, p. 1712, 1997

    Article  Google Scholar 

  60. Y.H. Koh, M.R. Oh, J.W. Lee, J.W. Yang, W.C. Lee, C.K. Park, J.B. Park, Y.C. Heo, K.M. Rho, B.C. Lee, M.J. Chung, M. Huh, H.S. Kim, K.S. Choi, W.C. Lee, J.K. Lee, K.H. Ahn, K.W. Park, J.Y. Yang, H.K. Kim, D.H. Lee, I.S. Hwang, Technical Digest of International Electron Devices Meeting, p. 579, 1997

    Google Scholar 

  61. F.T. brady, R. Brown, L. Rockett, J. Vasquez, IEEE Transactions on Nuclear Science, Vol. 45, no. 6, p. 2436, 1998

    Article  Google Scholar 

  62. J.W. Park, Y.G. Kim, I.K. Kim, K.C. Park, K.C. Lee, T.S. Jung, IEEE Journal of Solid-State Circuits, Vol. 34, p. 1446, 1999

    Article  Google Scholar 

  63. Y.W. Kim, S.B. Park, Y.G. Ko, K.I. Kim, I.K. Kim, K.J. Bae, K.W. Lee, J.O. Y, U. Chung, K.P. Suh, Digest of Technical Papers of the IEEE International Solid-State Circuits Conference, p. 32, 1999

    Google Scholar 

  64. T. Yamauchi, F. Morisita, S. Maeda, K. Arimoto, K. Fujishima, H. Ozaki, T. Yoshihara, IEEE Journal of Solid-State Circuits, Vol. 35, no. 8, p. 1169, 2000

    Article  Google Scholar 

  65. T. Douseki, N. Shibata, J. Yamada, Proceedings of the IEEE International SOI Conference, p. 24, 2000

    Google Scholar 

  66. D. Goldman, K. DeGregorio, C.S. Kim, M. Nielson, J. Zahurak, S. Parke, 2001 IEEE International SOI Conference. Proceedings, p. 97, 2001

    Google Scholar 

  67. M. Itoh, Y. Kawai, S. Ito, K. Yokomizo, Y. Katakura, Y. Fukuda, F. Ishikawa, Electrochemical Society Proceedings, Vol. 2001-3, p. 331, 2001

    Google Scholar 

  68. T. Douseki, N. Shibata, J. Yamada, Proceedings of the IEEE International SOI Conference, p. 143, 2001

    Google Scholar 

  69. A. Chatterjee, J. Liu, S. Aur, P.K. Mozumder, M. Rodder, I.C. Chen, Technical Digest of the International Electron Device Meeting, p. 87, 1994

    Google Scholar 

  70. Y. Hu, C. Teng, T.W. Houston, K. Joyner, and T.J. Aton, Digest of Technical papers, Symposium on VLSI Technology, p. 128, 1996

    Google Scholar 

  71. A. Zaleski, D.E. Ioannou, D. Flandre, J.P. Colinge, Proceedings of the IEEE International SOI Conference, p. 13, 1994

    Google Scholar 

  72. M.H. Chi, A. Bergemont, Proceedings of the IEEE International SOI Conference, p. 129, 1995

    Google Scholar 

  73. H. Choi, T. Tanabe, N. Kotaki, K.W. Koh, K.T. Park, H. Kurino, M. Koyanagi, Exgtended Abstracts of the International Conference on Solid-State Devices and Materials, p. 246, 2001

    Google Scholar 

  74. X. Lin, M. Chan, Proceedings of the IEEE International SOI Conference, p. 71, 2002

    Google Scholar 

  75. Y.K. Lee, J.S. Sim, S.K. Sung, C.J. Lee, T.H. Kim, J.D. Lee, B.G. Park, D.H. Lee, Y.W. Kim, IEEE Electron Device Letters, Vol. 23, no. 11, p. 664, 2002

    Article  Google Scholar 

  76. H. Silva, M.K. Kim, C.W. Kim, S. Tiwari, Proceedings of the IEEE International SOI Conference, p. 105, 2003

    Google Scholar 

  77. J.A. Mandelman, R.H. Dennard, G.B. Bronner, J.K. DeBrosse, R. Divakaruni, Y. Li, C.J. Radens, IBM Journal of Research & Development, Vol. 46, no. 2-3, p. 187, 2002

    Article  Google Scholar 

  78. M.R. Tack, M. Gao, CL. Claeys, G.J. Declerck, IEEE Transactions on Electron Devices, Vol. 37, no. 5, p. 1373, 1990

    Article  Google Scholar 

  79. S. Okhonin, M. Nagoga, J.M. Saliese, P. Fazan, IEEE International SOI Conference, p. 153, 2001

    Google Scholar 

  80. S. Okhonin, M. Nagoga, J.M. Saliese, P. Fazan, IEEE Electron Device Letters, Vol. 23, no. 2, p. 85, 2002

    Article  Google Scholar 

  81. S. Okhonin, M. Nagoga, J.M. Saliese, P. Fazan, O. Faynot, J. de Pontcharra, S. Cristoloveanu, H. van Meer, K. De Meyer, Solid-State Electronics, Vol. 46, no. 11, p. 1709, 2002

    Article  Google Scholar 

  82. P. Fazan, S. Okhonin, M. Nagoga, J.M. Sál ese, L. Portmann, R. Ferrant, M. Pastre, M. Blagojevic, A. Borschberg, M. Declercq, Proceedings of the IEEE International SOI Conference, p. 10, 2002

    Google Scholar 

  83. T. Ohsawa, K. Fujita, T. Higashi, Y. Iwata, T. Kajiyama, Y. Asao, K. Sunouchi, IEEE Journal of Solid-State Circuits, Vol. 37, no. 11, p. 1510, 2002

    Article  Google Scholar 

  84. P. Fazan, S. Okhonin, M. Nagoga, Proceedings of the IEEE International SOI Conference, p. 15, 2003

    Google Scholar 

  85. F. Silveira, D. Flandre, and P.G.A. Jespers, IEEE Journal of Solid-State Circuits, Vol. 31, no. 9, p. 1314, 1996

    Article  Google Scholar 

  86. D. Flandre, B. Gentinne, J.P. Eggermont, and P.G.A. Jespers, Proceedings of the IEEE International SOI Conference, p. 99, 1994

    Google Scholar 

  87. Y. Omura and K. Izumi, IEEE Electron Device Letters, Vol. EDL-12, p. 655, 1991

    Article  Google Scholar 

  88. E.A. McShane, K. Shenai, Proceedings of the 22nd International Conference on Microelectronics (MIEL), Vol. 1, p. 107, 2000

    Google Scholar 

  89. I. Rahim, I. Lim, J. Foerstner, and B.Y. Hwang, Proceedings of the IEEE International SOI Conference, p. 170, 1992

    Google Scholar 

  90. K. Joardar, Solid-State Electronics, Vol. 39, no. 4, p. 511, 1996

    Article  Google Scholar 

  91. I. Rahim, B.Y. Hwang, and J. Foerstner, Proceedings of the IEEE International SOI Conference, p. 170, 1992

    Google Scholar 

  92. A. Viviani, J.P. Raskin, D. Flandre, J.P. Colinge, and D. Vanoenacker, Technical Digest of the International Electron Device Meeting, p. 713, 1995

    Google Scholar 

  93. J.P. Raskin, A. Viviani, D. Flandre, J.P. Colinge, IEEE Transactions on Electron Devices, Vol. 44, no. 12, p. 2252, 1997

    Article  Google Scholar 

  94. D. Flandre, J.P. Colinge, J. Chen, D. De Ceuster, J.P. Eggermont, L. Ferreira, B. Gentinne, P.G.A. Jespers, A. Viviani, R. Gillon, J.P. Raskin, A. Vander Vorst, D. Vanhoenacker-Janvier, Analog Integrated Circuits and Signal Processing, Vol. 21, p. 213, 1999

    Article  Google Scholar 

  95. D. Lederer, C. Desrumeaux, F. Brünier, J.P. Raskin, Proceedings of the IEEE International SOI Conference, p. 50, 2003

    Google Scholar 

  96. D. Eggert, P. Huebler, A. Huerrich, H. Kueck, W. Budde, M. Vorwerk, IEEE Transactions on Electron Devices, Vol. 44, no. 11, p. 1981, 1997

    Article  Google Scholar 

  97. F. Ishikawa, Y. Nagatomo, Y. Katakura, S. Itoh, H. Matsuhashi, N. Hirashita, S. Baba, Electrochemical Society Proceedings, Vol. 2003-05, p. 123, 2003

    Google Scholar 

  98. J.O. Plouchart, Proceedings of the IEEE International SOI Conference, p. 1, 2003

    Google Scholar 

  99. ibidem

    Google Scholar 

  100. M. Vorwerk, D. Eggert, IEEE International Conference on Electronics, Circuits and Systems, Part Vol. 2, p. 31, 1998

    Google Scholar 

  101. D. Eggert, P. Huebler, A. Huerrich, H. Kueck, W. Budde, M. Vorwerk, IEEE Transactions on Electron Devices, Vol. 44, no. 11, p. 1981, 1997

    Article  Google Scholar 

  102. Y. Fukuda, S. Ito, M. Ito, OKI Technical Review, Vol. 4, p. 54, 2001

    Google Scholar 

  103. F. Ichikawa, Y. Nagatomo, Y. Katakura, S. Itoh, H. Matsuhashi, N. Hirashita, S. Baba, Electrochemical Society Proceedings, Vol. 2003-05, p. 123, 2003

    Google Scholar 

  104. R. Reedy, J. Cable, D. Kelly, M. Stuber, F. Wright, G. Wu, Analog Integrated Circuits and Signal Processing, Vol. 25, p. 171, 2000

    Article  Google Scholar 

  105. P. Francis, A. Terao, B. Gentinne, D. Flandre, J.P. Colinge, Technical Digest of the International Electron Device Meeting, p. 353, 1992

    Google Scholar 

  106. A.J. Auberton-Hervé, J.P. Colinge and D. Flandre, Japanese Solid State Technology, pp. 12–17, Dec. 1993(日本器亅二)

    Google Scholar 

  107. P. Francis, A. Terao, B. Gentinne, D. Flandre, and J.P. Colinge, Technical Digest of the International Electron Device Meeting, p. 353, 1992

    Google Scholar 

  108. A. Viviani, D. Flandre, and P. Jespers, Proceedings of the IEEE SOI Conference, p. 110, 1996

    Google Scholar 

  109. M. Hattori, S. Kuromiya, F. Itoh, IEEE International SOI Conference, p. 120, 1998

    Google Scholar 

  110. M. Hattori, S. Kuromiya, F. Itoh, Proceedings of the IEEE International SOI Conference, p. 119, 1998

    Google Scholar 

  111. J. Weyers and H. Vogt, Technical Digest of the International Electron Device Meeting, p. 225, 1992

    Google Scholar 

  112. A. Nakagawa, N. Yasuhara, I. Omura, Y. Yamaguchi, T. Ogura, T. Matsudai, Technical Digest of the International Electron Device Meeting, p. 229, 1992

    Google Scholar 

  113. D.B. King, “A summary of high-temperature electronics needs, research and development in the United States”, presented at the EUROFORM seminar, May 1992, Darmstadt, Germany

    Google Scholar 

  114. B. Gentinne, J.P. Eggermont, J.P. Colinge, Electronics Letters, Vol. 31-24, p. 2092, 1995

    Article  Google Scholar 

  115. D.M. Fletwood, F.V. Thome, S.S. Tsao, P.V. Dressendorfer, V.J. Dandini, and J.R. Schwank, IEEE Transactions on Nuclear Science, Vol. 35, p. 1099, 1988

    Article  Google Scholar 

  116. G.E.Davis, L.R. Hite, T.G.W. Blake, C.E. Chen, H.W. Lam, R. DeMoyer, IEEE Transactions on Nuclear Science, Vol. 32, p. 4432, 1985

    Google Scholar 

  117. W.F. Kraus, J.C. Lee, Proceedings SOS/SOI Technology Conference, p. 173, 1989

    Google Scholar 

  118. F. Irom, G.M. Swift, F.H. Farmanesh, A.H. Johnston, Proceedings of the IEEE International SOI Conference, p. 203, 2002

    Google Scholar 

  119. F.T. Brady, T. Scott T, R. Brown, J. Damato, N.F. Haddad, IEEE Transactions on Nuclear Science, Vol. 41, no. 6, pt. 1, p. 2304, 1994

    Article  Google Scholar 

  120. F.T. Brady, R. Brown, L. Rockett, J. Vasquez, IEEE Transactions on Nuclear Science, Vol. 45, no. 6, pt. 1, p. 2436, 1998

    Article  Google Scholar 

  121. J.L. Leray, E. Dupont-Nivet, M Raffaelli, Y.M. Coíc, O. Musseau, J.F. Péré, P. Lalande, J. Brédy, A.J. Auberton-Hervé, M. Bruel, and B. Giffard, Annales de Physique, Colloque n°2, Vol. 14, suppl. to n°6, p. 565, 1989

    Google Scholar 

  122. J.L. Leray, E. Dupont-Nivet, J.F. Péré, Y.M. Coíc, M. Rafaelli, A.J. Auberton-Hervé, M. Bruel, B. Giffard and J. Margail, IEEE Transactions on Nuclear Science, Vol. 37, no. 6, p. 2013, 1990

    Article  Google Scholar 

  123. G.T. Goeloe, G.A. Hanidu, and K.H. Lee, Tech. Prog. of IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper PG-5, p. 35, 1990

    Google Scholar 

  124. M.A. Guerra, Proc. of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90-6, p. 21, 1990

    Google Scholar 

  125. W.F. Kraus, J.C. Lee, W.H. Newman, and J.E. Clark, Tech. Prog. of IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper PG-6, p. 35, 1990

    Google Scholar 

  126. L.J. Palkuti, J.J. LePage, IEEE Transactions on Nuclear Science, Vol. 29, p. 1832, 1982

    Article  Google Scholar 

  127. J.L. Leray, E. Dupont-Nivet, J.F. Péré, Y.M. Coíc, M. Rafaelli, A.J. Auberton-Hervé, M. Bruel, B. Giffard and J. Margail, IEEE Transactions on Nuclear Science, Vol. 37, no. 6, p. 2013, 1990

    Article  Google Scholar 

  128. J.L. Leray, E. Dupont-Nivet, J.F. Péré, O. Musseau, P. Lalande, and A. Umbert, Proceedings SOS/SOI Technology Conference, p. 114, 1989

    Google Scholar 

  129. M. Dentan, E. Delagnes, N. Fourches, M. Rouger, M.C. Habrard, L. Blanquart, P. Delpierre, R. Potheau, R. Truche, J.P. Blanc, E. Delevoye, J. Gautier, J.L. Pelloie, J. de Pontcharra, O. Flament, J.L. Leray, J.L. Martin, J. Montaron, and O. Musseau, IEEE Transactions on Nuclear Science, Vol. 40, no. 6, p. 1555, 1993

    Article  Google Scholar 

  130. O. Flament, J.L. Leray, and O. Musseau, Low-power HF microelectronics: a unified approach, edited by G.A.S. Machado, IEE circuits and systems series 8, the Institution of Electrical Engineers, p. 185, 1996

    Google Scholar 

  131. R.P. Zingg, Microelectronic Engineering, Vol. 59, p. 461, 2001

    Article  Google Scholar 

  132. R.P. Zingg, Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD ′2001), p. 343, 2001

    Google Scholar 

  133. T. Letavic, M. Simpson, E. Arnold, E. Peters, R. Aquino, J. Curcio, S. Herko, S. Mukherjee, Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD ′99), p. 325, 1999

    Google Scholar 

  134. R.P. Zingg, Microelectronic Engineering, Vol. 59, p. 461, 2001

    Article  Google Scholar 

  135. M. Berkhout, IEEE. IEEE Journal of Solid-State Circuits, Vol. 38, no. 7, p. 1198, 2003

    Article  Google Scholar 

  136. E. Arnold, H. Pein, and S.P. Herko, Technical Digest of the International Electron Device Meeting, p. 813, 1884

    Google Scholar 

  137. J. Weyers, H. Vogt, M. Berger, W. Mach, B. Mütterlein, M. Raab, F. Richter, and F. Vogt, Proceedings of the 22nd ESSDERC, Microelectronic Engineering, Vol. 19, p 733, 1992

    Article  Google Scholar 

  138. T. Nishimura, Y. Akasaka, Extended Abstracts of the 5th International Workshop on Future Electron Devices — Three Dimensional Integration, Miyagi-Zao, Japan, p. 1, 1988

    Google Scholar 

  139. T. Nishimura, Y. Inoue, K. Sugahara, S. Kusunoki, T. Kumamoto, S. Nagawa, N. Nakaya, Y. Horiba, Y. Akasaka, Technical Digest of the International Electron Device Meeting, p. 111, 1987

    Google Scholar 

  140. A. Terao, F. Van de Wiele, IEEE Circuits and Devices Magazine, Vol. 3, no. 6, p. 31, 1987

    Article  Google Scholar 

  141. R. Aibara, Y. Mitsui, T. Ae, Extended Abstracts of the 8th International Workshop on Future Electron Devices — Three Dimensional ICs and Nanometer Functional Devices, Kochi, Japan, p. 113, 1990

    Google Scholar 

  142. T. Ae, Extended Abstracts of the 5th International Workshop on Future Electron Devices — Three Dimensional Integration, Miyagi-Zao, Japan, p. 55, 1988

    Google Scholar 

  143. Y. Inoue, T. Ipposhi, T. Wada, K. Ichinose, T. Nishimura, Y. Akasaka, Proceedings of the Symposium on VLSI Technology, p. 39, 1989

    Google Scholar 

  144. C.C. Liu, S. Tiwari, Proceedings of the IEEE International SOI Conference, p. 68, 2002

    Google Scholar 

  145. Y. Akasaka, Extended Abstracts of the 8th International Workshop on Future Electron Devices — Three Dimensional ICs and Nanometer Functional Devices, Kochi, Japan, p. 9, 1990

    Google Scholar 

  146. M. Nakano, Oyo Buturi, Vol. 54, no. 7, p. 652, 1985 (日本器亅二)

    Google Scholar 

  147. T. Nishimura, Y. Akasaka, Vol. 54, no. 12, p. 1274, 1985 (日本器亅二)

    Google Scholar 

  148. K. Yamazaki, Y. Itoh, A. Wada, Y. Tomita, Extended Abstracts of the 8th International Workshop on Future Electron Devices — Three Dimensional ICs and Nanometer Functional Devices, Kochi, Japan, p. 105, 1990

    Google Scholar 

  149. Y. Itoh, A. Wada, K. Morimoto, Y. Tomita, K. Yamazaki K, Microelectronic Engineering, Vol. 15, no. 1-4, p. 187, 1991

    Article  Google Scholar 

  150. K. Kioi, S. Toyayama, M. Koba, Technical Digest of the International Electron Devices Meeting, p. 66, 1988

    Google Scholar 

  151. S. Toyoyama, K. Kioi, K. Shirakawa, T. Shinozaki, K. Ohtake, Extended Abstracts of the 8th International Workshop on Future Electron Devices — Three Dimensional ICs and Nanometer Functional Devices, Kochi, Japan, p. 109, 1990

    Google Scholar 

  152. K. Kioi, T. Shinozaki, S. Toyoyama, K. Shirakawa, K. Ohtake, S. Tsuchimoto, IEEE Journal of Solid-State Circuits, Vol. 27, no. 8, p. 1130, 1992

    Article  Google Scholar 

  153. G.W. Neudeck, Electrochemical Society Proceedings, Vol. 99-3, p. 25, 1999

    Google Scholar 

  154. J. Burns, L. Mcllrath, J. Hopwood, C. Keast, D.P. Vu, K. Warner, P. Wyatt, Proceedings of the IEEE Onternational SOI Conference, p. 20, 2000

    Google Scholar 

  155. K. Warner, J. Burns, C. Keast, R. Kunz, D. Lennon, A. Loomis, W. Mowers, D. Yost, Proceedings of the IEEE Onternational SOI Conference, p. 123, 2002

    Google Scholar 

  156. C. Colinge, B. Roberds, B. Doyle, Journal of Electronic Materials, Vol. 30, p. 841, 2001

    Article  Google Scholar 

  157. H. Moriceau, O. Rayssac, B. Aspar, B. Ghyselen, Electrochemical Society Proceedings, Vol. 2003-19, p. 49, 2003

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. University of California, USA

    Jean-Pierre Colinge

Authors
  1. Jean-Pierre Colinge
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 2004 Springer Science+Business Media New York

About this chapter

Cite this chapter

Colinge, JP. (2004). SOI Circuits. In: Silicon-on-Insulator Technology: Materials to VLSI. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-9106-5_8

Download citation

  • DOI: https://doi.org/10.1007/978-1-4419-9106-5_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-4795-8

  • Online ISBN: 978-1-4419-9106-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation