Abstract
Once Silicon-On-Insulator material has been produced, it is important to characterize it and assess its quality. Accurate measurement of parameters such as defect density, thickness of the top silicon layer and the buried insulator, carrier lifetime, and quality of the silicon-insulator interface is of vital importance.
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Colinge, JP. (2004). SOI Materials Characterization. In: Silicon-on-Insulator Technology: Materials to VLSI. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-9106-5_3
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