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Quantum and Coulomb Effects in Nano Devices

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Nano-Electronic Devices

Abstract

In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this book chapter we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantum-mechanical size quantization effects. Inclusion of tunneling within semi-classical simulation schemes is discussed in details. We also demonstrate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the presence of unintentional dopant atoms at random locations within the channel of alternative technology devices.

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Acknowledgements

We would like to thank the financial support from the National Science Foundation under Contract Number ECCS 0901251: Modeling Heating Effects in Low-Power Multi-Gate SOI Devices and High-Power GaN HEMTs. Program Director: Paul Werbos.

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  1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, USA

    Dragica Vasileska

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  1. Dragica Vasileska
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  2. Hasanur Rahman Khan
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  3. Shaikh Shahid Ahmed
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  4. Gokula Kannan
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  5. Christian Ringhofer
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Correspondence to Dragica Vasileska .

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  1. Dept. Electrical Engineering &, Center for Solid State, Arizona State University, Tempe, 85287-5706, Arizona, USA

    Dragica Vasileska

  2. , Dept. of Electrical Engineering, Arizona State University, Tempe, 85287-5706, Arizona, USA

    Stephen M. Goodnick

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Vasileska, D., Khan, H.R., Ahmed, S.S., Kannan, G., Ringhofer, C. (2011). Quantum and Coulomb Effects in Nano Devices. In: Vasileska, D., Goodnick, S. (eds) Nano-Electronic Devices. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-8840-9_2

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