Tunable BAW Filters

  • Stéphane Razafimandimby
  • Cyrille Tilhac
  • Andreia Cathelin
  • Andreas Kaiser
Part of the Integrated Circuits and Systems book series (ICIR)


Most current radio receivers use SAW bandpass filters for band selection. Their center frequency depends on the dimensions of the interdigital structure. Therefore, in the next few years, SAW technology will face some fabrication process limits because of the need of higher operating frequencies. BAW resonators are emerging as an alternative technology. One of the potential advantages is the compatibility of the BAW process with standard silicon processing technology. BAW resonators exhibit high Q factors around 1,000 which make them very attractive for low insertion loss RF filters. Nevertheless, process dispersions on the thickness of AlN lead to a shift of the BAW resonator characteristic frequencies and thus a shift of the filter’s center frequency. Moreover, BAW resonators suffer from thermal drift of around 20ppm/°C. Therefore, the need of designing a tunable filter and an automatic tuning circuitry appears for SoC in order to correct process and/or temperature deviations. After presenting the way of synthesizing BAW filters for a given mask, the feasibility of tuning a 2-GHz bandpass BAW filter is demonstrated in this chapter by a very first flip-chip assembly of a BAW solidly mounted resonator (SMR) die on the top of a BiCMOS 0.25-μ m chip.


Resonant Frequency Insertion Loss Negative Capacitance Filter Synthesis Envelope Detection 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Stéphane Razafimandimby
    • 1
  • Cyrille Tilhac
    • 1
  • Andreia Cathelin
    • 1
  • Andreas Kaiser
    • 2
  1. 1.STMicroeletronicsCrollesFrance
  2. 2.ISEN/IEMNLille/Villeneuve d’AscqFrance

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