Abstract
A two-level computational model for simulation of the electric signal detected on the electrodes of a Semiconductor-Oxide-Semiconductor (SOS) capacitor forming a nanoscale artificial membrane, and containing a nanopore with translocating DNA are presented. At the device level, a three-dimensional self-consistent scheme involving snapshots of the DNA charge distribution, as well as the electrolytic charge and the charge in the semiconductor membrane compute the electrostatic potential over the whole solid-liquid system. With this numerical approach we investigate the possibility of resolving individual nucleotides as well as their types in the absence of conformational disorder. At the system level, we develop a circuit-element model for the SOS semiconductor membrane where the membrane is discretized into interconnected elementary circuit elements to assess the response of the DNA away from the pore. The model is tested on the translocation of 11 base single-stranded C3AC7 DNA molecule, for which the electric signal shows good qualitative agreement with the multi-scale device approach of Gracheva et al. also described in the first part of this chapter (Gracheva et al., Nanotech. 17, 622–633, 2006), while quantifying the low-pass filtering in the membrane.
The material used in this chapter was in part published in the Nanotechnology Journal (Gracheva et al., Nanotech. 17, 622–633, 3160–3165, 2006). This material is reproduced with permission from the Publisher (Institute of Physics Publishing Limited).
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Acknowledgments
This work was funded by NIRT-NSF grant #NSFCCR02-10843, DARPA grant #392FA9550-04-1-0214, NIH grants ROI-HG003713-01 and P41-PR05969. The authors gratefully acknowledge the use of the supercomputer time at the National Center for Supercomputer Applications provided through Large Resource Allocation Committee grant MCA05S028. We are grateful to Dr. G. Timp for useful discussion and to Dr. A. Aksimentiev for supplying NAMD data.
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Appendix
Appendix
7.1.1 Ionic Concentrations
The ionic concentrations in KCl electrolyte solution are similar to electron and hole concentrations in an intrinsic semiconductor. Because of this similarity, we can consider the K + Cl – electrolytic solution as an intrinsic semiconductor and introduce virtual semiconductor parameters, i.e. a virtual energy band gap E geff , virtual density states of K + ions and Cl – ions, \( {N_{{K^{+} }}} \) and \( {N_{C{l^{-} }}} \), and virtual effective masses, \( m_{{K^{+} }}^* \) and \( m_{C{l^{-} }}^* \) for potassium and chlorine ions, respectively [38]. With these virtual parameters, we can calculate the ion concentrations of the electrolytic solution as follows:
where [K +]0 and [Cl –]0 are the bulk ion concentration, and the virtual density of states \( {N_{{K^{+} }}} \) and \( {N_{C{l^{-} }}} \) are given by
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Gracheva, M.E., Leroux, A., Destiné, J., Leburton, JP. (2011). Simulation of Electronic Sensing of Biomolecules in Translocation Through a Nanopore in a Semiconductor Membrane. In: Iqbal, S., Bashir, R. (eds) Nanopores. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-8252-0_7
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