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Atomic-Resolution Study of β-Si3N4/SiO2 Interfaces

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Book cover Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces

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Abstract

In this chapter I describe results of the experimental study of \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) interface. This work was carried out in an effort to examine the morphology of \(\hbox{Si}_3\hbox{N}_4\,(10\overline{1}0)\) surface in the absence of rare-earth elements to better understand their importance in stabilizing the ceramics open-ring termination discussed in Chap. 4. The chapter commences with an introduction to \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) interfaces, followed by a short summary of the experimental methods used in this study. Next, the results of the investigation are presented in detail, focusing in particular on the composition and bonding characteristics across the interface.

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  1. Argonne National Laboratory, Argonne, IL, USA

    Weronika Walkosz

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  1. Weronika Walkosz
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Correspondence to Weronika Walkosz .

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Walkosz, W. (2011). Atomic-Resolution Study of β-Si3N4/SiO2 Interfaces. In: Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces. Springer Theses. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7817-2_6

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