Circuit Design with Resonant Tunneling Diodes
Advances in crystal growth and fabrication technologies are enabling researchers to explore novel device concepts that are based on the quantum mechanical features of electrons. These structures offer the possibility of circuit and device miniaturization well below those offered by conventional complementary metal-oxide semiconductor (CMOS) lithography techniques. The resonant tunneling diode (RTD) concept, which utilizes the electron-wave resonance in multi-barrier heterostructures, emerged as a pioneering device in the mid-1970s. It was predicted that such devices would offer picosecond device switching speeds and reduction in device counts per circuit function.
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